Abstract
High-quality mid-wave infrared (MWIR) double-layer heterojunction HgCdTe has been grown on 8-inch Si substrates using molecular beam epitaxy. We grew six 8-inch-diameter MWIR HgCdTe wafers on Si substrates and measured within-wafer and wafer-to-wafer variations of key parameters such as cutoff wavelength, HgCdTe thickness, macrodefect density including voids and microvoids, and arsenic do** uniformity. The results indicate that the growth was very successful and the process repeatable, well controlled, and ready for production.
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Reddy, M., **, X., Lofgreen, D.D. et al. Demonstration of High-Quality MBE HgCdTe on 8-Inch Wafers. J. Electron. Mater. 48, 6040–6044 (2019). https://doi.org/10.1007/s11664-019-07246-y
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DOI: https://doi.org/10.1007/s11664-019-07246-y