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The δ-Do**-Dependent Spin Polarization in a Both Magnetically and Electrically Confined Semiconductor Heterostructure

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Abstract

In this paper, we theoretically investigate how to control electron-spin polarization by δ-do** in a both magnetically and electrically confined semiconductor heterostructure. It is shown that, due to Zeeman coupling, a considerable spin polarization effect appears in the δ-doped device. It is also shown that both magnitude and sign of spin polarization can be tuned by changing weight or position of the δ-do**. Thus, a δ-do** controllable spin filter can be achieved for spintronics device applications.

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Acknowledgments

This work was supported by the Scientific Research Fund of Hunan Provincial Education Department (Grant No. 17C1435).

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Authors and Affiliations

  1. Department of Science, Shaoyang University, Hunan, 422004, People’s Republic of China

    Gui-**ang Liu, Ge Tang & Wen-Yue Ma

Authors
  1. Gui-**ang Liu
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  2. Ge Tang
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  3. Wen-Yue Ma
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Corresponding author

Correspondence to Gui-**-Dependent%20Spin%20Polarization%20in%20a%20Both%20Magnetically%20and%20Electrically%20Confined%20Semiconductor%20Heterostructure&author=Gui-**-Dependent Spin Polarization in a Both Magnetically and Electrically Confined Semiconductor Heterostructure. J. Electron. Mater. 48, 2055–2060 (2019). https://doi.org/10.1007/s11664-019-07023-x

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  • DOI: https://doi.org/10.1007/s11664-019-07023-x

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