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HfAlO-based ferroelectric memristors for artificial synaptic plasticity

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Abstract

Memristors have received much attention for their ability to achieve multilevel storage and synaptic learning. However, the main factor that hinders the application of memristors to simulate neural synapses is the instability of the formation and breakage of conductive filaments inside traditional memristors, which makes it difficult to simulate the function of biological synapses in practice. However, the resistance change of ferroelectric memristors relies on the polarization inversion of the ferroelectric thin film, thus avoiding the above problem. In this study, a Pd/HfAlO/LSMO/STO/Si ferroelectric memristor is proposed, which can achieve resistive switching properties through the combined action of ferroelectricity and oxygen vacancies. The I–V curves show that the device has good stability and uniformity. In addition, the effect of pulse sequence modulation on the conductance was investigated, and the biological synaptic function and learning behavior were simulated successfully. The results of the above studies provide a basis for the development of ferroelectric memristors with neurosynaptic-like behaviors.

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Data availability The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was financially supported by the Natural Science Foundation of Hebei Province (No. F2021201009), the National Natural Science Foundation of China (No. 62104058), the Natural Science Foundation of Hebei Province (No. F2021201022), the Science and Technology Project of Hebei Education Department (No. QN2020178), the Foundation of President of Hebei University (No. XZJJ201910), and Advanced Talents Incubation Program of the Hebei University (No. 521000981362).

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  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, China

    Jie Yang, Zixuan Jian, Zhongrong Wang, Jianhui Zhao, Zhenyu Zhou, Yong Sun, Mengmeng Hao, Linxia Wang, Pan Liu, **gjuan Wang, Yifei Pei, Zhen Zhao, Wei Wang & **aobing Yan

  2. Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Bei**g, 100083, China

    Jie Yang

  3. Department of Materials Science and Engineering, National University of Singapore, Singapore, 117576, Singapore

    **aobing Yan

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  1. Jie Yang
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Correspondence to **aobing Yan.

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Yang, J., Jian, Z., Wang, Z. et al. HfAlO-based ferroelectric memristors for artificial synaptic plasticity. Front. Phys. 18, 63603 (2023). https://doi.org/10.1007/s11467-023-1310-6

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