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Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2

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Abstract

EuCd2As2 was theoretically predicted to be a minimal model of Weyl semimetals with a single pair of Weyl points in the ferromagnet state. However, the heavily p-doped EuCd2As2 crystals in previous experiments prevent direct identification of the semimetal hypothesis. Here, we present a comprehensive magneto-transport study of high-quality EuCd2As2 crystals with ultralow bulk carrier density (1013 cm−3). In contrast to the general expectation of a Weyl semimetal phase, EuCd2As2 shows insulating behavior in both antiferromagnetic and ferromagnetic states as well as surface-dominated conduction from band bending. Moreover, the application of a dc bias current can dramatically modulate the resistance by over one order of magnitude, and induce a periodic resistance oscillation due to the geometric resonance. Such nonlinear transport results from the high nonequilibrium state induced by an electrical field near the band edge. Our results suggest an insulating phase in EuCd2As2 and put a strong constraint on the underlying mechanism of anomalous transport properties in this system.

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Authors and Affiliations

  1. State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China

    Yuxiang Wang, Jianwen Ma, Yicheng Mou, Jiaming Gu, Wu Shi & Cheng Zhang

  2. School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China

    Jian Yuan, Peihong Cheng & Yanfeng Guo

  3. State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200241, China

    Wenbin Wu & **ang Yuan

  4. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, 230031, China

    Yong Zhang & **glei Zhang

  5. School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China

    **ang Yuan

  6. Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China

    Wu Shi & Cheng Zhang

  7. ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, China

    Yanfeng Guo

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  1. Yuxiang Wang
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Correspondence to **glei Zhang, Yanfeng Guo or Cheng Zhang.

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Conflict of interest The authors declare that they have no conflict of interest.

Additional information

We thank **angyu Cao and Pengliang Leng for stimulating discussions. Cheng Zhang was sponsored by the National Key R&D Program of China (Grant No. 2022YFA1405700), the National Natural Science Foundation of China (Grant Nos. 12174069, and 92365104), and the Shuguang Program supported by Shanghai Education Development Foundation and Shanghai Municipal Education Commission. Yanfeng Guo was supported by the Double First-Class Initiative Fund of ShanghaiTech University, and the open project from Bei**g National Laboratory for Condensed Matter Physics. **glei Zhang was supported by the National Key R&D Program of China (Grant No. 2022YFA1602603), and the National Natural Science Foundation of China (Grant No. 12122411). Wu Shi was supported by the National Natural Science Foundation of China (Grant No. 12274090), and the Natural Science Foundation of Shanghai (Grant No. 22ZR1406300).

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Wang, Y., Ma, J., Yuan, J. et al. Absence of metallicity and bias-dependent resistivity in low-carrier-density EuCd2As2. Sci. China Phys. Mech. Astron. 67, 247311 (2024). https://doi.org/10.1007/s11433-023-2283-0

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