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Magnetism variation of the compressed antiferromagnetic topological insulator EuSn2As2

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Abstract

We report a comprehensive high-pressure study, up to 21.1 GPa, on the antiferromagnetic topological insulator EuSn2As2 achieved through synchrotron X-ray diffraction, Raman scattering, electrical resistance, magnetic resistance, and Hall transport measurements in combination with first-principles calculations. The Néel temperatures determined from resistance are increased from (24±1) to (77±8) K under pressure, which is a result of enhanced magnetic exchange couplings between Eu2+ ions yielded by our first-principles calculations. The negative magnetoresistance of EuSn2As2 persists to higher temperatures accordingly. However, the enhancement of the observed Néel temperatures deviates from the calculations above 10.0 GPa. In addition, the magnitude of the magnetoresistance, Hall coefficients, and charge carrier densities show abrupt changes between 6.9 and 10.0 GPa. The abrupt changes likely originate from a pressure-induced valence change of Eu ions from a divalent state to a divalent and trivalent mixed state or are related to the structural transition revealed by Raman scattering measurements. Our results provide insight into magnetism variation in EuSn2As2 and similar antiferromagnetic topological insulators under pressure.

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Authors
  1. Hualei Sun
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  2. Cuiqun Chen
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  3. Yusheng Hou
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  4. Weiliang Wang
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  5. Yu Gong
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  6. Mengwu Huo
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  7. Lisi Li
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  8. Jia Yu
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  9. Wan** Cai
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  10. Naitian Liu
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  11. Ruqian Wu
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  12. Dao-**n Yao
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  13. Meng Wang
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Corresponding author

Correspondence to Meng Wang.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11904414, 11904416, 11574404, 11974432, and 12174454), National Key Research and Development Program of China (Grant Nos. 2019YFA0705702, 2018YFA0306001, and 2017YFA0206203), Guangdong Basic and Applied Basic Research Fund (Grant No. 2019A1515011337), Fundamental Research Funds for the Central Universities (Grant No. 18lgpy73), Key-Area Research and Development Program of Guangdong Province (Grant No. 2019B030330001), and Science and Technology Projects in Guangzhou (Grant No. 202102080361).

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Sun, H., Chen, C., Hou, Y. et al. Magnetism variation of the compressed antiferromagnetic topological insulator EuSn2As2. Sci. China Phys. Mech. Astron. 64, 118211 (2021). https://doi.org/10.1007/s11433-021-1760-x

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