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Flatness maintenance and roughness reduction of silicon mirror in chemical mechanical polishing process

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Abstract

As an important optical component in laser system, silicon mirror surface is required to have micron-level flatness and subnanometer-level roughness. The research concentrates on how to improve roughness as far as possible while maintaining flatness of silicon mirror surface during chemical mechanical polishing (CMP) process. A polishing edge effect model is established to explain the reason of flatness deterioration, and a roughness theoretical model is set up to get the limit of perfect surface roughness. Based on the models above, a polishing device is designed to maintain the surface flatness, and the optimized polishing process parameters are obtained by orthogonal tests to get a near-perfect surface roughness. Finally the maintenance of flatness and the improvement of roughness can be achieved at the same time in one step of CMP process. This work can be a guide for silicon mirror manufacture to improve optical reflection performance significantly.

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Authors and Affiliations

  1. Department of Mechanical Engineering, Tsinghua University, Bei**g, 100084, China

    BoCheng Jiang, DeWen Zhao, BingQuan Wang, YuHong Liu & **nChun Lu

  2. Hwatsing Technology Co., Ltd, Tian**, 300350, China

    HuiJia Zhao

Authors
  1. BoCheng Jiang
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  2. DeWen Zhao
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  3. BingQuan Wang
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  4. HuiJia Zhao
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  5. YuHong Liu
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  6. **nChun Lu
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Corresponding authors

Correspondence to YuHong Liu or **nChun Lu.

Additional information

This work was supported by the National Basic Research Program of China (Grant No. 2015CB057203), and the National Natural Science Foundation of China (Grant No. 91323302). This work was carried out in Tsinghua University and Hwatsing Technology Co., Ltd, China.

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Jiang, B., Zhao, D., Wang, B. et al. Flatness maintenance and roughness reduction of silicon mirror in chemical mechanical polishing process. Sci. China Technol. Sci. 63, 166–172 (2020). https://doi.org/10.1007/s11431-018-9414-6

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  • DOI: https://doi.org/10.1007/s11431-018-9414-6

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