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A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ do** for electronic and optoelectronic devices applications

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Abstract

Magnetite nanoparticles (α-Fe3O4) were successfully prepared by a chemical co-precipitation technique. Modification in electrical properties of α-Fe3O4 by Cu2+ dopant for the modification in electrical properties was deliberated. As the Cu2+ dopant content increased from 5 to 10%, the average crystallite size decreased from 2.96 to 2.93 nm. The synthesized sample doped with 5% exhibited the porous nature and least agglomeration. The optical studies revealed that energy band gap increased from 1.76–1.83 eV by enhancing Cu2+ content from 5 to 10%. The electrical studies revealed that the electrical conductivity decreased from 4.04 × 10−5 to 9.17 × 10−6 ℧ cm−1. The obtained consequences revealed that desired properties of Cu+2 doped Fe3O4 NPs can be obtained by controlling the substituting content in host material. The Fe3O4 NPs with Cu2+ do** exhibited higher electrical conductivity and become an excellent candidate for development of electronic and optoelectronic devices, such as, photodetector, sensors and energy storage devices.

Graphical Abstract

Highlights

  • Modification in electrical properties of α-Fe3O4 by Cu2+ dopant for the modification in electrical properties was deliberated.

  • As the Cu2+ dopant content increased from 5 to 10%, the average crystallite size decreased from 2.96 nm to 2.93 nm.

  • The synthesized sample doped with 5% exhibited the porous nature and least agglomeration.

  • The optical studies revealed that energy band gap increased from 1.76 to 1.83 eV by enhancing Cu2+ content from 5 to 10%. The electrical studies revealed that the electrical conductivity decreased from 4.04 × 10−5 to 9.17 × 10−6 ℧ cm−1.

  • The obtained consequences revealed that desired properties of Cu+2 doped Fe3O4 NPs can be obtained by controlling the substituting content in host material.

  • The Fe3O4 NPs with Cu2+ do** exhibited higher electrical conductivity and become an excellent candidate for development of electronic and optoelectronic devices, such as, photo-detector, sensors and energy storage devices.

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Acknowledgements

This work was funded by the Researchers Supporting Project Number (RSP2023R243) King Saud University, Riyadh, SaudiArabia.

Author contributions

SS: Conceptualization, Writing-Original Draft, Methodology, Investigation, Data Curation, Validation. MHJ: Formal analysis, Writing and editing, AAA: Language Editing, Writing-Review & Editing, MZHBM: Language Editing, Writing-Review & Editing, TY: Writing-Review & Editing, MRA: Writing-Review & Editing, AA: Writing-Review & Editing, AZ: Writing-Review & Editing.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shaanxi Normal University, **’an, 710119, PR China

    Shahroz Saleem

  2. Department of Physics and Chemistry, Faculty of Applied Sciences and Technology (FAST), Universiti Tun Hussein Onn Malaysia, 84600, Muar, Johor, Malaysia

    Muhammad Hasnain Jameel & Mohd Zul Hilmi Bin Mayzan

  3. Chemistry Department, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia

    Asma A. Alothman

  4. Department of Physics, University of Agriculture, Faisalabad, 38040, Pakistan

    Talha Yousaf & Muhammad Rehan Ahmad

  5. Department of Physics, Government Post Graduate College, Nowshera, 24100, Kyber Pakhtunkhwa, Pakistan

    Asad Ali

  6. Department of Physics, Riphah International University, Islamabad, 44000, Pakistan

    Abid Zaman

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  1. Shahroz Saleem
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Saleem, S., Jameel, M.H., Alothman, A.A. et al. A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ do** for electronic and optoelectronic devices applications. J Sol-Gel Sci Technol 109, 471–482 (2024). https://doi.org/10.1007/s10971-023-06287-4

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