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Dual-terminal artificial synapse in two-dimensional CrSBr memristor for neuromorphic computing

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Abstract

Novel computing technologies that imitate the principles of biological neural systems may serve low power consumption with significant cognitive and learning advantages. The development of memristors with non-volatile memory characteristics has opened up new applications in neuromorphic circuits and adaptive systems. However, conventional metal oxide memristor devices are generally based on oxygen vacancy or metal-ion conductive filament mechanisms that make it hard to realize the function of neuromorphic computing. Herein, we demonstrate that CrSBr nanosheet-based memristor exhibits high durability, low power consumption, and the capacity to achieve multiple reproducible resistance states, displaying resistive switching performance. Furthermore, we successfully simulated various synaptic behaviors, such as short-term/long-term plasticity, paired-pulse facilitation (PPF), and spike-timing-dependent plasticity (STDP), revealing the capability of CrSBr memristors to flexibly meet the demands of complex neuromorphic computing applications. Our work makes CrSBr a promising candidate which is considered to be the behavior of an ideal synaptic biomimetic device in future computing systems.

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The research data generated and analyzed during the current study are available from the corresponding author upon reasonable request.

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Funding

This work was financially supported by the National Key Research and Development Program of China (No. 2021YFA1600800), the National Natural Science Foundation of China (Nos. 11975234, 12105286, 12275271, and 12305369), Major Science and Technology Project of Anhui Province (No. 202103a05020025), the Key Program of Research and Development of Hefei Science Center CAS (No. 2021HSC-KPRD002), the Users with Excellence Program of Hefei Science Center CAS (Nos. 2020HSC-CIP013, 2021HSC-UE002), Collaborative Innovation Program of Hefei Science Center CAS (No. 2022HSC-CIP028), the Fundamental Research Funds for the Central Universities (No. WK2310000103), and partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication.

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Authors and Affiliations

  1. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China

    Zhi Li, Ruiqi Liu, Yafei Chu, Sihua Feng, Weican Lan, Hengli Duan, Chaocheng Liu & Wensheng Yan

  2. School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, 230026, China

    Ruiqi Liu

  3. Paul Scherrer Institut, 5232, Villigen, Switzerland

    Hengli Duan

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  1. Zhi Li
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  2. Ruiqi Liu
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  7. Chaocheng Liu
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Contributions

C.L. and W.Y. conceived the experiments and supervised the project. Z.L. fabricated the device and wrote the manuscript. R.L. analyzed the crystal structure results. Y.C., S.F., and W.L. analyzed the electrical results. H.D. analyzed the optical properties. All authors contributed to discussing the results and commenting on the manuscript.

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Correspondence to Chaocheng Liu.

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Li, Z., Liu, R., Chu, Y. et al. Dual-terminal artificial synapse in two-dimensional CrSBr memristor for neuromorphic computing. J Mater Sci: Mater Electron 35, 1091 (2024). https://doi.org/10.1007/s10854-024-12811-1

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