Abstract
Two different techniques, namely in-situ cycle annealing and post-growth patterning and annealing, were studied to reduce dislocation density in thick CdTe epilayers grown directly on (211) Si substrates using metal organic vapor phase epitaxy (MOVPE) for their applications in X-ray, gamma ray detector development. During in-situ annealing, it was observed that annealing initiated at a later stage of growth reduced the dislocation density more effectively than annealing initiated at the early growth stage. Nonetheless, in both cases, the dislocation density was reduced compared to the unannealed samples of similar thicknesses. On the other hand, the post-growth patterning of CdTe/Si into square islands, and subjecting these patterned samples to annealing was found to be more effective in reducing dislocations compared to the in-situ whole wafer annealing. However, subsequent growth of CdTe on the patterned and annealed samples to achieve thicker epilayers resulted rough surface, making them unsuitable for detector development.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs10854-023-11842-4/MediaObjects/10854_2023_11842_Fig1_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs10854-023-11842-4/MediaObjects/10854_2023_11842_Fig2_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs10854-023-11842-4/MediaObjects/10854_2023_11842_Fig3_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs10854-023-11842-4/MediaObjects/10854_2023_11842_Fig4_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs10854-023-11842-4/MediaObjects/10854_2023_11842_Fig5_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs10854-023-11842-4/MediaObjects/10854_2023_11842_Fig6_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs10854-023-11842-4/MediaObjects/10854_2023_11842_Fig7_HTML.jpg)
Similar content being viewed by others
Data availability
The data that support the findings of this study are available from the corresponding author upon reasonable request.
References
Q. Jiang, A.W. Brinkman, B.J. Cantwell, J.T. Mullins, F. Dierre, A. Basu, P. Veermani, P. Sellin, J. Electron. Mater. 38, 1548 (2009)
K. Iso, Y. Gokudan, M. Shiraishi, M. Nishikado, H. Murakami, A. Koukitu, J. Cryst. Growth. 506, 185 (2019)
R. Pandey, J. Drayton, C. Gregory, N.M. Kumar, K. Tyler, R. King, J. Sites, 47th IEEE Photovoltaic Specialists Conference, pp. 1326–1329 (2020). https://doi.org/10.1109/PVSC45281.2020.9300571
J.W. Garland, T. Biegala, M. Carmody, C. Gilmore, S. Sivananthan, J. Appl. Phys. 109, 102425 (2011)
S.R. Rao, S.S. Shintri, J.K. Markunas, R.N. Jacobs, I.B. Bhat, J. Electron. Mater. 40, 1790 (2011)
M. Reddy, J.M. Peterson, T. Vang, J.A. Franklin, M.F. Vilela, K. Olsson, E.A. Patten, W.A. Radford, J.W. Bangs, L. Melkonian, E.P.G. Smith, D.D. Lofgreen, S.M. Johnson, J. Electron. Mater. 40, 1706 (2011)
Y. Chen, S. Simingalam, G. Brill, P. Wijewarnasuriya, N. Dhar, J.J. Kim, D.J. Smith, J. Electron. Mater. 41, 2917 (2012)
I.B. Bhat, S.R. Rao, S. Shintri, R.N. Jacobs, Phys. Status Solidi C 9, 1712 (2012)
T. Seldrum, R. Bommena, L. Samain, J. Dumont, S. Sivananthan, R. Sporken, J. Vac. Sci. Technol. B 26, 1105 (2008)
Y. Chen, S. Farrell, G. Brill, P. Wijewarnasuriya, N. Dhar, J. Cryst. Growth. 310, 5303 (2008)
G. Brill, S. Farrell, Y.P. Chen, P.S. Wijewarnasurya, M.V. Rao, J.D. Benson, N. Dhar, J. Electron. Mater. 39, 967 (2010)
S. Simingalam, J. Pattison, Y. Chen, P. Wijewarnasuriya, M.V. Rao, J. Electron. Mater. 45, 4668 (2016)
A.J. Stoltz, J.D. Benson, M. Carmody, S. Farrell, P.S. Wijewarnasuriya, G. Brill, R. Jacobs, Y. Chen, J. Electron. Mater. 40, 1785 (2011)
W.W. Pan, R.J. Gu, Z.K. Zhang, W. Lei, G.A. Umana-Membreno, D.J. Smith, J. Anotoszewski, L. Faraone, J. Electron. Mater. 51, 4869 (2022)
Y. Du, B. Xu, G. Wang, Y. Miao, Z. Li, Z. Kong, Y. Dong, W. Wang, H.H. Radamson, Nanomaterials 12, 741 (2022)
M. Niraula, K. Yasuda, A. Watanabe, Y. Kai, H. Ichihashi, W. Yamada, H. Oka, T. Yoneyama, H. Nakashima, T. Nakanishi, K. Matsumoto, D. Katoh, Y. Agata, IEEE Trans. Nucl. Sci. 56, 836 (2009)
B.S. Chaudhari, H. Goto, M. Niraula, K. Yasuda, J. Appl. Phys. 130, 055302 (2021)
M. Niraula, K. Yasuda, J. Ozawa, T. Yamaguchi, S. Tsubota, T. Mori, Y. Agata, IEEE Trans. Nucl. Sci. 65, 2325 (2018)
B.S. Chaudhari, M. Niraula, Y. Takagi, R. Okumura, K.P. Sharma, T. Maruyama, J. Electron. Mater. 52, 3431 (2023)
W.J. Everson, C.K. Ard, J.L. Sepich, B.E. Dean, G.T. Neugebauer, H.F. Schaake, J. Electron. Mater. 24, 505 (1995)
S. Farrell, M.V. Rao, G. Brill, Y. Chen, P. Wijewarnasuriya, N. Dhar, D. Benson, K. Harris, J. Electron. Mater. 40, 1727 (2011)
D.P. Halliday, M.D.G. Potter, J.T. Mullins, A.W. Brinkman, J. Cryst. Growth. 220, 30 (2000)
Funding
The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.
Author information
Authors and Affiliations
Contributions
All authors contributed to this work.
Corresponding author
Ethics declarations
Conflict of interest
The authors have no conflicts to disclose.
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Niraula, M., Chaudhari, B.S., Okumura, R. et al. Strategies for dislocation density reduction in CdTe epilayers grown directly on (211) Si substrates using MOVPE. J Mater Sci: Mater Electron 35, 31 (2024). https://doi.org/10.1007/s10854-023-11842-4
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-023-11842-4