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Magnetodynamic properties on square patterned of FeGaB and Al2O3/FeGaB thin films

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Abstract

This article shows low dam** patterned FeGaB and Al2O3/FeGaB thin films. FeGaB has a lower dam** factor (0.0071) than the Al2O3/FeGaB thin film. The coercive field and magnetic anisotropy of Al2O3/FeGaB thin films are enhanced as a result of static magnetization (Magneto-Optical Kerr Effect). The magnetic anisotropy of the Al2O3/FeGaB film produces a larger magnetic domain evolution at 10.2 Oe than the FeGaB thin film. The magnetic domain wall velocity for the FeGaB thin film is shown to be larger utilizing micromagnetic modeling due to its low anisotropy and the impact of spin–orbit coupling. As a result of our findings, it can be employed in microwave and spintronic applications.

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Authors and Affiliations

  1. School of Information Science and Technology, ShanghaiTech University, Shanghai, China

    K. Yadagiri, **gwei Long, Yuxi Wang, Zhifeng Zhu & T. Wu

  2. Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, China

    Zhifeng Zhu & T. Wu

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  1. K. Yadagiri
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  2. **gwei Long
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  3. Yuxi Wang
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  4. Zhifeng Zhu
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  5. T. Wu
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Correspondence to K. Yadagiri.

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Yadagiri, K., Long, J., Wang, Y. et al. Magnetodynamic properties on square patterned of FeGaB and Al2O3/FeGaB thin films. J Mater Sci: Mater Electron 33, 15927–15935 (2022). https://doi.org/10.1007/s10854-022-08491-4

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