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Microstructure and shear strength of Au-20wt%Sn solder joints fabricated by thermo-compression bonding for LED packages

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Abstract

Solder joints of Au-20wt%Sn (Au-20Sn) between real light-emitting diode Si chips and AlN substrates were fabricated using thermo-compression (TC) bonding. We investigated the microstructure of TC-bonded solder joints using scanning electron microscopy, transmission electron microscopy (TEM), and scanning transmission electron microscopy (STEM) and its effect on shear strength. The metallization system for the Au-20Sn solder consisted of Pt/Ti thin films on Si chips and an electroless Ni/Pd/Au layer on AlN substrates. The TC bonding was carried out at 280, 290, 300, and 310 °C for 0.2, 0.6, and 1.2 s. Samples were aged at 200 °C for up to 1000 h in a conventional oven. The performance of the solder joints was sensitive to joining temperature. When the solder joint was formed at a relatively low temperature, shear strength was low due to the unbonded regions in the solder joints. The shear strength increased with joining temperature and time. When the solder joints were formed at a relatively high temperature, shear strength was high. The solder joints were composed of δ-phase at both interfaces and ζ’-phase at the center. After aging at 200 °C for up to 1000 h, shear strength slightly decreased. The main fracture modes before and after aging were Si cohesive fracture and interfacial fracture between Si and Ti, respectively. TEM and STEM clearly indicated that the Pt layer remained at the solder interface after aging. The high shear strength was attributed to the strong interface between Pt and the Au-20Sn solder.

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References

  1. H.H. Kim, S.H. Choi, S.H. Shin, Y.K. Lee, S.M. Choi, S. Yi, Microelectron. Reliab. 48, 445 (2008)

    Article  Google Scholar 

  2. K. Chu, C. Lee, S.H. Park, Y. Sohn, J. Mater. Sci. Mater. Electron. 28, 5174 (2017)

    Article  CAS  Google Scholar 

  3. J.W. Yoon, H.S. Chun, S.B. Jung, Mater. Sci. Eng. A 473, 119 (2008)

    Article  Google Scholar 

  4. V. Grolier, R. Schmid-Fetzer, J. Electron. Mater. 37, 815 (2008)

    Article  CAS  Google Scholar 

  5. J.W. Yoon, H.S. Chun, S.B. Jung, J. Alloys Compd. 469, 108 (2009)

    Article  CAS  Google Scholar 

  6. R.W. Chuang, D. Kim, J. Park, C.C. Lee, IEEE Trans. Components Packag Technol. 27, 177 (2004)

    Article  CAS  Google Scholar 

  7. J.C. McNulty, Proc. – 2008 Int. Symp. Microelectron. IMAPS 2008 909 (2008)

  8. S. Anhock, H. Oppermann, C. Kallmayer, R. Aschenbrenner, L. Thomas, H. Reichl, Proc. IEEE/CPMT Int. Electron. Manuf. Technol. Symp. 156 (1998)

  9. O. Wada, T. Kumai, Appl. Phys. Lett. 58, 908 (1991)

    Article  CAS  Google Scholar 

  10. S.C. Yang, W.C. Chang, Y.W. Wang, C.R. Kao, J. Electron. Mater. 38, 25 (2009)

    Article  Google Scholar 

  11. J.H. Park, J.H. Lee, Y.H. Lee, Y.S. Kim, J. Electron. Mater. 31, 1175 (2002)

    Article  CAS  Google Scholar 

  12. H. Dong, V. Vuorinen, M. Broas, M. Paulasto-Kröckel, J. Alloys Compd. 688, 388 (2016)

    Article  CAS  Google Scholar 

  13. S.S. Kim, J.H. Kim, S.W. Booh, T.G. Kim, H.M. Lee, Mater. Trans. 46, 2400 (2005)

    Article  CAS  Google Scholar 

  14. J.Y. Tsai, C.W. Chang, C.E. Ho, Y.L. Lin, C.R. Kao, J. Electron. Mater. 35, 65 (2006)

    Article  CAS  Google Scholar 

  15. H.Q. Dong, V. Vuorinen, X.W. Liu, T. Laurila, J. Li, M. Paulasto-Kröckel, J. Electron. Mater. 45, 566 (2016)

    Article  CAS  Google Scholar 

  16. H.G. Song, J.P. Ahn, J.W. Morris, J. Electron. Mater. 30, 1083 (2001)

    Article  CAS  Google Scholar 

  17. H.Q. Dong, V. Vuorinen, T. Laurila, M. Paulasto-Kröckel, Calphad Comput. Coupling Phase Diagrams Thermochem 43, 61 (2013)

    Article  CAS  Google Scholar 

  18. J. Peng, R.C. Wang, H.S. Liu, J.Y. Li, J. Mater. Sci. Mater. Electron. 29, 313 (2018)

    Article  CAS  Google Scholar 

  19. P. Lin, W. Liu, Y. Ma, Y. Huang, S. Tang, J. Mater. Sci. Mater. Electron. 31, 19013 (2020)

    Article  Google Scholar 

  20. J.-M. Han, I.-J. Seo, Y. Ahn, Y.-S. Ko, T.-H. Kim, J. Korean Soc. Manuf. Technol. Eng. 23, 355 (2014)

    Google Scholar 

  21. T. Tak-seng, D. Sun, H. Koay, M. Sabudin, J. Thompson, P. Martin, P. Rajkomar, S. Haque, EMAP2005. 118 (2005)

  22. H.P. Park, G. Seo, S. Kim, K. one Ahn, Y.H. Kim (2019) J. Mater. Sci. Mater. Electron. 30, 1055 

  23. H. Ru, V. Wei, T. Jiang, M. Chiu, Proc. Int. Microsystems, Packag. Assem. Circuits Technol. Conf. IMPACT 311 (2011)

  24. J.W. Ronnie Teo, F.L. Ng, L.S. Kip Goi, Y.F. Sun, Z.F. Wang, X.Q. Shi, J. Wei, G.Y. Li, Microelectron. Eng. 85, 512 (2008)

    Article  Google Scholar 

  25. L.L. Liao, K.N. Chiang, J. Mech. 35, 81 (2019)

    Article  Google Scholar 

  26. S.W. Yoon, W.K. Choi, H.M. Lee, Acta Metall. 40, 297 (1999)

    CAS  Google Scholar 

  27. A. Rautiainen, V. Vuorinen, H. Heikkinen, M. Paulasto-Krockel, IEEE Trans. Components Packag Manuf. Technol. 8, 169 (2018)

    Article  CAS  Google Scholar 

  28. I. Corporation, https://www.indium.com/technical-documents/product-data-sheets/download/3714(2017)

Download references

Acknowledgements

This research was supported by an LED business team collaborative project between Hanyang University and Samsung Electronics Co. Ltd.

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Authors and Affiliations

  1. Division of Materials Science and Engineering, Hanyang University, 04863, Seoul, Republic of Korea

    Dong-hun Lee, Jae-il Jang & Young-Ho Kim

  2. LED Business Team, Samsung Electronics, 17113, Yongin-si, Republic of Korea

    Dong-hun Lee

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  1. Dong-hun Lee
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DL, JJ, and YK wrote the paper.

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Correspondence to Young-Ho Kim.

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Lee, Dh., Jang, Ji. & Kim, YH. Microstructure and shear strength of Au-20wt%Sn solder joints fabricated by thermo-compression bonding for LED packages. J Mater Sci: Mater Electron 33, 11002–11016 (2022). https://doi.org/10.1007/s10854-022-08079-y

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