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SiN-based platform toward monolithic integration in photonics and electronics

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Abstract

This work presents a review of silicon nitride applications in Si photonics and electronics. As the one of the prominent photonics platform, it owes excellent characteristics in optical communication that is complimentary in performance to the silicon-on-insulator (SOI) photonics. In addition, silicon nitride plays also an important role in realizing germanium laser because of its unique behavior in tuning strain. The induced strain varies from high tensile to compressive stress. The induced strain improves the carrier transport in the channel of nFETs or pFETs. The strain provides also the possibility in adjusting the bandstructure of germanium and converts the germanium from indirect-to-direct band-gap material which is fundamental in obtain germanium laser.

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Acknowledgements

This work was supported in part by the projects of the construction of new research and development institutions (Grant No. 2019B090904015) and the construction of high-level innovation research institute from the Guangdong Greater Bay Area Institute of Integrated Circuit and System (Grant No. 2019B090909006), in part by the National Key Research and Development Program of China (Grant No. 2016YFA0301701), the Important National Science & Technology Specific Projects of China (Grant No.2017ZX02301007) and the Youth Innovation Promotion Association of CAS (Grant No. 2016112).

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  1. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Bei**g, 100029, People’s Republic of China

    Wenjuan **ong, Guilei Wang, Junfeng Li, Chao Zhao, Wenwu Wang & Henry H. Radamson

  2. University of Chinese Academy of Sciences, Bei**g, 100049, People’s Republic of China

    Wenjuan **ong, Guilei Wang, Chao Zhao & Henry H. Radamson

  3. Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou, 510535, Guangdong, People’s Republic of China

    Guilei Wang & Henry H. Radamson

  4. Department of Electronics Design, Mid Sweden University, Holmgatan 10, 851 70, Sundsvall, Sweden

    Henry H. Radamson

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**ong, W., Wang, G., Li, J. et al. SiN-based platform toward monolithic integration in photonics and electronics. J Mater Sci: Mater Electron 32, 1–18 (2021). https://doi.org/10.1007/s10854-020-04909-z

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