Abstract
Graphene films were grown by the low-pressure chemical vapor deposition with a single injection of acetylene on an iron film catalyst deposited on oxidized silicon substrate. After treatment of the graphene on the iron film with aqueous solution of iron nitrate the structures consisting of quasi-suspended graphene on reaction products of the iron film with iron nitrate were obtained. The electron transport and magnetotransport properties of the films were investigated. The films have a low resistance of 80 Ohm sq−1 and a high sheet carrier density (8 × 1013 cm−2 at room temperature). At temperatures less than 200 K, the dependence of the Hall resistance on the magnetic field is like the abnormal Hall effect. Large positive linear magnetoresistance at a room temperature (60–100%) was observed in the films in a field of 0.6 T, which is attractive for creating magnetoresistive sensors. It was found that the critical magnetic field at which the MR becomes linear is very small (116–650 Oe) and linearly dependent on a temperature. The MR is proportional to the average mobility 〈µ〉. At low temperatures, the magnetoresistance increases with increasing temperature. At higher temperatures the MR decreases with increasing temperature.
Similar content being viewed by others
References
K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Science 22, 666 (2004)
Y. Zhang, Y.-W. Tan, H.L. Stormer, P. Kim, Nature 438, 201 (2005)
S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, D.C. Elias, J.A. Jaszczak, A.K. Geim, Phys. Rev. Lett. 100, 016602 (2008)
D.K. Efelov, P. Kim, Phys. Rev. Lett. 105, 256805 (2010)
K.S. Kim, Y. Zhao, H. Jang, S.Y. Lee, J.M. Kim, K.S. Kim, J.H. Ahn, P. Kim, J.Y. Choi, B.H. Hong, Nature 457, 706 (2009)
X.S. Li, W.W. Cai, J.H. An, S. Kim, J. Nah, D.X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, R.S. Ruoff, Science 324, 1312 (2009)
S. Bae, H. Kim, Y. Lee, X.F. Xu, J.S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H.R. Kim, Y.I. Song, Y.J. Kim, K.S. Kim, B. Ozyilmaz, J.H. Ahn, B.H. Hong, S. Iijima, Nat. Nanotechnol. 5, 574 (2010)
V.L. Nguyen, B.G. Shin, D.L. Duong, S.T. Kim, D. Perello, Y.J. Lim, Q.H. Yuan, F. Ding, H.Y. Jeong, H.S. Shin, S.M. Lee, S.H. Chae, Q.A. Vu, S.H. Lee, Y.H. Lee, Adv. Mater. 27, 1376 (2015)
H.J. Shin, W.M. Choi, S.M. Yoon, G.H. Han, Y.S. Woo, E.S. Kim, S.J. Chae, X.S. Li, A. Benayad, D.D. Loc, F. Gunes, Y.H. Lee, J.Y. Choi, Adv. Mater. 23, 4392 (2011)
J. Kwak, J.H. Chu, J.K. Choi, S.D. Park, H. Go, S.Y. Kim, K. Park, S.D. Kim, Y.W. Kim, E. Yoon, S. Kodambaka, S.Y. Kwon, Nat. Commun. 3, 645 (2012)
Q.Q. Zhuo, Q. Wang, Y.P. Zhang, D. Zhang, Q.L. Li, C.H. Gao, Y.Q. Sun, L. Ding, Q.J. Sun, S.D. Wang, J. Zhong, X.H. Sun, S.T. Lee, ACS Nano 9, 594 (2015)
Z. Yan, Z.W. Peng, Z.Z. Sun, J. Yao, Y. Zhu, Z. Liu, P.M. Ajayan, J.M. Tour, ACS Nano 5, 8187 (2011)
M.P. Levendorf, C.S. Ruiz-Vargas, S. Garg, J. Park, Nano Lett. 9, 4479 (2009)
V.N. Matveev, V.I. Levashov, O.V. Kononenko, V.T. Volkov, Scr. Mater. 147, 37 (2018)
Y.A. Kasumov, A. Shailos, I.I. Khodos, V.T. Volkov, V.I. Levashov, V.N. Matveev, S. Gueron, M. Kobylko, M. Kociak, H. Bouchiat, V. Agache, A.S. Rollier, L. Buchaillot, A.M. Bonnot, A.Y. Kasumov, Appl. Phys. A 88, 687 (2007)
O.V. Kononenko, V.N. Matveev, D.P. Field, D.V. Matveev, S.I. Bozhko, D.V. Roshchupkin, E.E. Vdovin, A.N. Baranov, Nanosyst. Phys. Chem. Math. 5, 117 (2014)
E.J. Heller, Y. Yang, L. Kocia, W. Chen, S. Fang, M. Borunda, E. Kaxiras, ACS Nano 10, 2803 (2016)
R. Rao, R. Podila, R. Tsuchikawa, J. Katoch, D. Tishler, A.M. Rao, M. Ishigami, ACS Nano 5, 1594 (2011)
J. Kozlova, A. Niilisk, H. Alles, V. Sammelselg, Carbon 94, 160 (2015)
A. Niilisk, J. Kozlova, H. Alles, J. Aarik, V. Sammelselg, Carbon 98, 658 (2016)
Y. Gogotsi, Nat. Nanotechnol. 13, 625 (2018)
V. Ambegaokar, B.I. Halperin, J.S. Langer, Phys. Rev. B 4, 2612 (1971)
H. Miyazaki, K. Tsukagoshi, A. Kanda, M. Otani, S. Okada, Nano Lett. 10, 3888 (2010)
T.F. Chung, Y. Xu, Y.P. Chen, Phys. Rev. B 98, 035425 (2018)
L. Berger, G. Bergmann, in The hall effect and its applications, ed. by C.L. Chien, C.R. Westgate (Plenum, New York, 1980), p. 55
S.P. Gubin, Y.A. Koksharov, G.B. Khomutov, GYu. Yurkov, Russ. Chem. Rev. 74, 489 (2005)
V.N. Nikiforov, A.E. Goldt, E.A. Gudilin, V.G. Sredin, V.Y. Irhin, Bull. Russ. Acad. Sci. Phys. 78, 1075 (2014)
W. Wu, X.H. **ao, S.F. Zhang, T.C. Peng, J. Zhou, F. Ren, C.Z. Jiang, Nanoscale Res. Lett. 5, 1474 (2010)
M.U. Zulfiqar, M.U. Rahman, M. Usman, S.K. Hasanain, A. Ullah, I.W. Kim, J. Korean Phys. Soc. 65, 1925 (2014)
E.M. Pugh, N. Rostoker, Rev. Mod. Phys. 25, 151 (1953)
F.V. Tikhonenko, A.A. Kozikov, A.K. Savchenko, R.V. Gorbachev, Phys. Rev. Lett. 103, 226801 (2006)
S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, F. Schedin, L.A. Ponomarenko, D. Jiang, A.K. Geim, Phys. Rev. Lett. 97, 016801 (2006)
Z.M. Liao, Y.B. Zhou, H.C. Wu, B.H. Han, D.P. Yu, EPL 94, 57004 (2011)
H. Li, Y.J. Zeng, X.J. Hu, H.H. Zhang, S.C. Ruan, M.J. Van Bael, C. Van Haesendonck, Carbon 124, 193 (2017)
M. Parish, P. Littlewood, Nature 426, 162 (2003)
M. Parish, P. Littlewood, Phys. Rev. B 72, 094417 (2005)
Acknowledgements
This work was supported by the State task 075-00475-19-00 IMT RAS.
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Kononenko, O.V., Zotov, A.V., Volkov, V.T. et al. Electron transport and magnetotransport in graphene films grown on iron thin film catalyst. J Mater Sci: Mater Electron 30, 16353–16358 (2019). https://doi.org/10.1007/s10854-019-02006-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-02006-4