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Ultraviolet nano-photodetector based on ZnS:Cl nanoribbon/Au Schottky junctions

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Abstract

We report on a semiconductor nanostructures/metal Schottky junction for optoelectronic device application. The n-type ZnS nanoribbons (NRs) with an electron mobility of 64.9 cm V−1 s−1 and electron concentration of 5.7 × 1017 cm−3 were synthesized by using Cl as dopant via a thermal co-evaporation method. Electrical analysis reveals that the Schottky barrier diodes (SBD) based on the ZnS:Cl NRs/Au junctions exhibited typical rectifying behavior (rectification ratio >103) with Schottky barrier height of .64 eV and a small ideality factor of ~1.05 at 320 K. Interestingly, n-ZnS:Cl NR/Au nano-SBD device exhibited pronounced negative photoresponse at forward bias, but positive photoresponse at reverse bias under 365 nm UV light irradiation. Finally, the detailed reason for this phenomenon was explained by the energy band diagram.

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Acknowledgments

This work was supported by the financial supports from the China Scholarship Council, the Natural Science Foundation of China (Nos. 61106010, 21101051), the Natural Science Foundation of Anhui Province (J2014AKZR0059), and the Fundamental Research Funds for the Central Universities (Nos. 2013HGXJ0195, 2012HGCX0003, 2013HGCH0012, 2014HGCH0005).

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Authors and Affiliations

  1. School of Electronic Sciences and Applied Physics and Anhui Provincial Key Laboratory of Advanced Materials and Devices, Hefei University of Technology, Hefei, 230009, Anhui, People’s Republic of China

    Li Wang, Xu Ma, Ran Chen, Yong-Qiang Yu & Lin-Bao Luo

  2. Department of Materials Science and Engineering, University of Toronto, Toronto, ON, M5S 3E4, Canada

    Li Wang

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  1. Li Wang
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  2. Xu Ma
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Correspondence to Li Wang, Yong-Qiang Yu or Lin-Bao Luo.

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Wang, L., Ma, X., Chen, R. et al. Ultraviolet nano-photodetector based on ZnS:Cl nanoribbon/Au Schottky junctions. J Mater Sci: Mater Electron 26, 4290–4297 (2015). https://doi.org/10.1007/s10854-015-2981-8

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