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Bandgap variation in grain size controlled nanostructured CdO thin films deposited by pulsed-laser method

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Abstract

Cadmium oxide (CdO) thin films were prepared by pulsed laser deposition technique. Their structure, surface morphology, optical and electrical properties have been investigated. With a decrease in the laser energy density, the average grain size of the CdO film can be adjusted from 108 to 25 nm. High-resolution TEM observation showed that more crystalline defects like lattice distortion, dislocation and amorphous structure existed in the small grained (25 nm) CdO film, and X-ray photoelectron spectroscopy analysis confirmed that the film had more oxygen vacancies. The electrical and optical properties of the films significantly depended on the grain size. With the grain size decreasing to 25 nm, the optical band gap energy of the CdO film increased obviously from 2.82 to 3.33 eV. This change in the nature of material from semimetal to a wide band gap semiconductor, combining with its higher optical transmission (92 %) in visible light region, higher carrier concentration (1.25 × 1021 cm−3) and lower electrical resistivity (2.8 × 10−4 cm−3), makes the nano-grained CdO film very useful in optoelectronic applications.

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Acknowledgments

This work was supported by the Foundation of National Key Basic Research and Development Program (No. 2010CB631001), the National Nature Science Foundation (Grant No. 31070841) and the Program for Changjiang Scholars and Innovative Research Team in University.

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Authors and Affiliations

  1. Key Laboratory of Automobile Materials, Ministry of Education, College of Materials Science and Engineering, Jilin University, 5988 Renmin Street, Nanling Campus, Changchun, 130025, Jilin, People’s Republic of China

    L. L. Pan, G. Y. Li, S. S. **ao, L. Zhao & J. S. Lian

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  1. L. L. Pan
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  2. G. Y. Li
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  3. S. S. **ao
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  4. L. Zhao
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  5. J. S. Lian
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Correspondence to J. S. Lian.

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Pan, L.L., Li, G.Y., **ao, S.S. et al. Bandgap variation in grain size controlled nanostructured CdO thin films deposited by pulsed-laser method. J Mater Sci: Mater Electron 25, 1003–1012 (2014). https://doi.org/10.1007/s10854-013-1678-0

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