Abstract
In this study, we carried out for the first time a galvanomagnetic investigation of 3C–SiC/6H–SiC heterostructures at liquid-helium temperatures and observed in n-3C–SiC low resistance of the samples and the appearance of a negative magnetoresistance in weak fields (~1 T). Analysis of the results we obtained shows that the low resistance is in all probability due to a metal—insulator transition in 3C–SiC epitaxial films. It was also found that the negative magnetoresistance magnitude decreases as the density of intertwine boundaries in a 3C–SiC epitaxial film becomes lower.
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Acknowledgements
The study was supported in part by the Russian Foundation for Basic Research (grant no. 07-02-00919a) and a KWA grant of the Swedish Academy of Sciences.
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Lebedev, A.A., Abramov, P.L., Agrinskaya, N.V. et al. Negative magnetoresistance in SiC heteropolytype junctions. J Mater Sci: Mater Electron 19, 793–796 (2008). https://doi.org/10.1007/s10854-007-9417-z
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DOI: https://doi.org/10.1007/s10854-007-9417-z