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The structural deformations in the Si/SiGe system induced by thermal annealing

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Abstract

The structural deformations in Si/SiGe system during thermal annealing were investigated by means of atomic force microscope (AFM) and high-resolution X-ray diffraction (HRXRD). The (004) rocking curve measurements showed that the obvious fringes of rocking curve obtained from pre-annealing sample were faded out gradually and disappeared completely with increasing the annealing temperature, which indicated that the abrupt Si/SiGe interface was destroyed gradually. The analyses of the peak broadening and relative position of the SiGe epilayer with respect to the Si substrate in high-resolution reciprocal space map (HRRSM) measurements described clearly the formation of mosaic structure in Si/SiGe system. The inner deformation induced the surface corrugate, known as crosshatch morphologies, which was analyzed by AFM measurements.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, China University of Petroleum Bei**g, Bei**g, 102200, China

    Shuqi Zheng

  2. Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama, 930-8555, Japan

    Shuqi Zheng, M. Mori, T. Tambo & C. Tatsuyama

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  1. Shuqi Zheng
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  2. M. Mori
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  3. T. Tambo
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  4. C. Tatsuyama
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Correspondence to Shuqi Zheng.

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Zheng, S., Mori, M., Tambo, T. et al. The structural deformations in the Si/SiGe system induced by thermal annealing. J Mater Sci 42, 5312–5317 (2007). https://doi.org/10.1007/s10853-006-0901-2

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  • DOI: https://doi.org/10.1007/s10853-006-0901-2

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