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CNTFET based comparators: design, simulation and comparative analysis

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Abstract

In this work, we design and simulate carbon nanotube field effect transistor (CNTFET) based open-loop and dynamic comparators and compared the performance with complementary metal oxide semiconductor (CMOS) based open loop and dynamic comparators. Four types of comparators have been designed; a two-stage comparators, a push–pull output comparators, dynamic comparators and double-tail dynamic comparator (DTDC), employing 32 nm technology node using CNTFETs and the conventional MOSFETs. A comparative analysis of key performance measuring parameters such as output voltage, rise time, fall time, duty cycle, average power and slew rate and area etc. have been done. The simulation studies have shown that the CNTFET based comparators consumes lesser power by 3 orders, results in higher speed and gives output close to their supply rails in comparison to CMOS based comparators. Further, effects of variation in temperature on frequency and power have been thoroughly studied. Simulation results show that CNTFET based comparators gives insensitive behavior for variation in temperature. All the proposed circuits are fully integrable because of the use of active components in the circuits.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Jamia Millia Islamia, New Delhi, 110025, India

    Seema Jogad & Sajad A. Loan

  2. Intelligent Biometric Group, School of Electrical and Electronic Engineering, Universiti Sains Malaysia, 14300, George Town, Malaysia

    M. Saqib Akhoon

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  1. Seema Jogad
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Jogad, S., Akhoon, M.S. & Loan, S.A. CNTFET based comparators: design, simulation and comparative analysis. Analog Integr Circ Sig Process 114, 265–273 (2023). https://doi.org/10.1007/s10470-022-02119-7

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