Abstract
We study the homogeneous linewidth of transitions between many-particle states in semiconductor quantum dots due to scattering processes. Carrier–density-dependent scattering rates due to carrier–carrier Coulomb interaction and carrier–LO-phonon interaction are obtained on a non-perturbative level and connected to a von Neumann–Lindblad equation for the quantum-dot many-particle configurations, allowing to identify the dephasing of transitions between many-particle states. For different dot geometries, we discuss implications of energetic quantum-dot wetting-layer separation on Coulomb and LO-phonon contributions.
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The authors would like to acknowledge financial support from the BMBF Q.com project and the Deutsche Forschungsgemeinschaft.
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This paper is part of the topical collection “Quantum Repeaters: From Components to Strategies” guest edited by Manfred Bayer, Christoph Becher and Peter van Loock.
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Florian, M., Steinhoff, A., Gies, C. et al. Scattering-induced dephasing of many-particle transitions in semiconductor quantum dots. Appl. Phys. B 122, 6 (2016). https://doi.org/10.1007/s00340-015-6296-5
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DOI: https://doi.org/10.1007/s00340-015-6296-5