Abstract
InAs quantum dots grown on a GaAs substrate have been one of the most successful semiconductor material systems to demonstrate single-photon-based quantum optical phenomena. In this context, we present the feasibility to extend the low-temperature photoluminescence emission range of In(Ga)As/GaAs quantum dots grown by metal-organic vapor-phase epitaxy from the typical window between 880 and 960 nm to wavelengths above 1.3 μm. A low quantum dot density can be obtained throughout this range, enabling the demonstration of single- and cascaded photon emission. We further analyze polarization-resolved micro-photoluminescence from a large number of individual quantum dots with respect to anisotropy and size of the underlying fine-structure splittings in the emission spectra. For samples with elevated emission wavelengths, we observe an increasing tendency of the emitted photons to be polarized along the main crystal axes.
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The authors gratefully acknowledge funding by the Federal Ministry of Education and Research, in particular for the projects Q.com-H (16KIS0115) and QuaHL-Rep (01BQ1041).
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This paper is part of the topical collection “Quantum Repeaters: From Components to Strategies” guest edited by Manfred Bayer, Christoph Becher and Peter van Loock.
Jan Kettler and Matthias Paul contributed equally to this article.
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Kettler, J., Paul, M., Olbrich, F. et al. Single-photon and photon pair emission from MOVPE-grown In(Ga)As quantum dots: shifting the emission wavelength from 1.0 to 1.3 μm. Appl. Phys. B 122, 48 (2016). https://doi.org/10.1007/s00340-015-6280-0
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DOI: https://doi.org/10.1007/s00340-015-6280-0