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Dynamic characteristics of AlGaInAs/InP octagonal resonator microlaser

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Abstract

The static and dynamic characteristics are investigated for an AlGaInAs/InP octagonal resonator microlaser with a side length of 10.8 μm and a 2-μm-wide vertex output waveguide. The scattered light is observed by top-view infrared microscopic image and compared with simulated mode field pattern. Single-mode operation with the side-mode suppression ratio of 42 dB is achieved. Small-signal modulation responses with a 3-dB bandwidth of 15.7 GHz are reached at 287 K, and a clear eye diagram is demonstrated at 15 Gbit/s.

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Acknowledgments

This work was supported by the High Technology Project of China under Grant 2012AA012202, and the National Nature Science Foundation of China under Grants 61235004, 61021003, 61106048, and 61006042.

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Authors and Affiliations

  1. The State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Bei**g, 100083, China

    Ling-**u Zou, Yong-Zhen Huang, **ao-Meng Lv, Heng Long, **-Long **ao, Yue-De Yang & Yun Du

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  1. Ling-**u Zou
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  2. Yong-Zhen Huang
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  3. **ao-Meng Lv
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  4. Heng Long
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  7. Yun Du
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Correspondence to Yong-Zhen Huang.

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Zou, LX., Huang, YZ., Lv, XM. et al. Dynamic characteristics of AlGaInAs/InP octagonal resonator microlaser. Appl. Phys. B 117, 453–458 (2014). https://doi.org/10.1007/s00340-014-5854-6

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  • DOI: https://doi.org/10.1007/s00340-014-5854-6

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