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A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes

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Abstract

The electroluminescence efficiency at room temperature and low temperature (15 K) in a wide-narrow-well InGaN/GaN light-emitting diode with a narrow last well (1.5 nm) and a narrow next-to-last barrier (5 nm) is investigated to study the efficiency droop phenomenon. A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels.

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Authors and Affiliations

  1. Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P.O. Box 912, Bei**g, 100083, People’s Republic of China

    K. Ding, Y. P. Zeng & J. M. Li

  2. Novel Material Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Bei**g, 100083, People’s Republic of China

    K. Ding, Y. P. Zeng, X. C. Wei & J. M. Li

  3. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Bei**g, 100083, People’s Republic of China

    Y. P. Zeng, Z. C. Li, J. X. Wang, H. X. Lu, P. P. Cong, X. Y. Yi, G. H. Wang & J. M. Li

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  1. K. Ding
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  2. Y. P. Zeng
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  3. X. C. Wei
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  4. Z. C. Li
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  5. J. X. Wang
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  6. H. X. Lu
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  7. P. P. Cong
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  8. X. Y. Yi
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  9. G. H. Wang
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  10. J. M. Li
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Correspondence to K. Ding.

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Ding, K., Zeng, Y.P., Wei, X.C. et al. A wide-narrow well design for understanding the efficiency droop in InGaN/GaN light-emitting diodes. Appl. Phys. B 97, 465–468 (2009). https://doi.org/10.1007/s00340-009-3657-y

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  • DOI: https://doi.org/10.1007/s00340-009-3657-y

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