Abstract
Double perovskite compounds have the general formula A2B'B''O6; these materials have attracted a lot of interest due to their diverse structural, electrical, dielectric and magnetic properties. In this work, we have studied the effects of substitution of lanthanum by Pr at the A site on the electrical and magnetic properties of the compounds La2-xPrxNiMnO6 [x = 0, 0.1, 0.2]. The La2NiMn \({\mathrm{O}}_{6}\) compound belongs to the manganite family, which is defined as an important material for technological applications in various fields. Do** with praseodymium (Pr) in the A site changes the electrical, dielectric and magnetic properties of the compound. The samples were successfully synthesized by the sol–gel method. Structural investigation by RX diffraction shows that all compounds crystallize in the monoclinic system with space group P21/n at room temperature. Dielectric studies for all samples were measured by complex impedance spectroscopy in the temperature range 100–200 K and in the frequency range 100 Hz–1 MHz. Moreover, the substitution of lanthanum with praseodymium leads to a decrease in the dielectric constant and the modulus analysis shows the presence of the relaxation phenomenon in these materials. The electrical conductivity obeys the Arrhenius law for all samples. The activation energies obtained from the conductivity and modulus are different. The compound exhibits a magnetic transition and the Curie temperature (Tc) decreases with increasing Pr content.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig1_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig2_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig3_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig4_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig5_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig6_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig7_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig8_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig9_HTML.png)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs00339-022-05520-1/MediaObjects/339_2022_5520_Fig10_HTML.png)
Similar content being viewed by others
References
N.A. Spaldin, M. Fiebig, Science 309(5733), 391–392 (2005)
R. Schmidt, D.C. Sinclair, K. Muller, ceramics for capacitor applications (2013), p. 19.
S. **, T.H. Tiefel, M. McCormack, R. Ramesh, L.H. Chen, Science 264, 413 (1994)
C. Zener, Phys. Rev. 82, 403 (1951)
M.B. Salomon, M. Jaime, Rev. Mod. Phys. 73, 583 (2001)
E.L. Nagaev, Phys. Rep. 346, 387 (2001)
K.I. Nassar, N. Rammeh, S.S. Teixeira, M.P.F. Graça, J. Electron. Mater. 51, 370–377 (2022)
M. Mohamed, K.I. Nassar, M. Mohamed, N. Rammeh, M.P.F. Graça, J. Mol. Struct. 1258, 132658 (2022)
K.I. Nassar, M. Slimi, N. Rammeh, S.S. Teixeira, M.P.F. Graça, Appl. Phys. A 127, 940 (2021)
K.I. Nassar, M. Slimi, N. Rammeh, A. Bouhamed, A. Njeh, O. Kanoun, J. Mater. Sci Mater Electron 32, 24050–24057 (2021)
N.S. Rogado et al., Adv. Mater. 17(18), 2225–2227 (2005)
R. Dass, J.-Q. Yan, J. Goodenough, Phys. Rev. B, 68 (6) (2003), Article 064415.
S.R. Spurgeon et al., Chem. Mater. 28(11), 3814–3822 (2016)
D. Rubi et al., Mater. Sci. Eng. B 126(2–3), 139–142 (2006)
H. Yang et al., J. Appl. Phys. 93(10), 6987–6989 (2003)
D. Singh, C.H. Park, Phys. Rev. Lett., 100 (8) (2008), Article 087601.
M. Niketa Bajpai, Saleem and Ashutosh Mishra. J. Mater. Sci. Mater. Electron. 32, 12890–12902 (2021)
Y. Bai, Y. **a, H. Li, L. Han, Z. Wang, X. Wu, S. Lv, X. Liu, J. Meng, J. Phys. Chem. C 116, 16841–16847 (2012)
C. Thirmal, C. Nayek, P. Murugavela, V. Subramanian, AIP Adv. 3, 112109 (2013)
H.M. Rietveld, J. Appl. Crystallogr. 2, 65 (1969)
Rodriguez-Carbajal J. Program FullProf. Laboratoire Léon Brillouin (CEACNRS), version 3.5d, LLB-JRS (1998).
MPF Graça, MGF da Silva, ASB Sombra, MA Valente. J Non-Cryst Solids 353(4751), 4390–4394
MGF da Silva, ASB Sombra, MA Valente, J. Non-Cryst Solids 352 (42–49), 5199–5204.
MPF Graça, PR Prezas, MM Costa, MA Valente, J. Sol–Gel Sci Technol. 64 (1), 78–85.
K. Devi Chandrasekhar, A.K. Das, C. Mitra, A. Venimadhav, J. Phys. Condens. Matter 24, 9 (2012). (495901)
R.D. Shannon, Acta Crystallogr. Sect. A Cryst. Phys. Diffr. Theor. Gen. Crystallogr., 32 (5) (1976), pp. 751–767.
Y. Guo et al., J. Supercond. Nov. Magn. 26(11), 3287–3292 (2013)
R.D. Shannon, Acta Crystallogr. Sect. A Found. Crystallogr. 32, 751 (1976)
M. Pollak, G.E. Pike, Phys. Rev. Lett. 28, 1449 (1972)
K.S. Cole, P.M. Krishna, D.M. Prasad, J.H. Lee, J.S. Kim, J. Alloy. Compd. 464, 497 (2008)
H. Kolodziej, L. Sobczyk, Acta Phys. Pol. A 39, 59 (1971)
S.V. Rathan, G. Govindaraj, Mater. Chem. Phys. 120, 255 (2010)
B.N. Parida, P.R. Das, R. Padhee, R.N.P. Choudhary, J. Alloys Compd. 540, 267 (2012)
A. Omri, E. Dhahri, M. Es-Souni, L.C. Costa, J. Alloy. Compd. 497, 173 (2012)
M.D. Ingram, Phys. Chem. Glas. 28, 215 (1987)
A.K. Jonscher, Universal relaxation law (Chelsea Dielectics Press, London, 1996)
Lin, Y. Q., Chen, X. M., & Liu, X. Q. (2009), 149(19–20), 784–787.
S.R. Elliott, Adv. Phys. 36, 135 (1987)
K. Funke, Prog. Solid State Chem. 22, 111 (1993)
K. Shimakawa, Philos. Mag. B 46, 123 (1982)
S.R. Elliott, Philos. Mag. B 36, 129 (1978)
J.B. Goodenough, A. Wold, R.J. Arnott, N. Menyuk, Phys. Rev. 124, 373–384 (1961)
D. Choudhury, P. Mandal, R. Mathieu, A. Hazarika, S. Rajan, A. Sundaresan, U.V. Waghmare, R. Knut, O. Karis, P. Nordblad, D.D. Sarma, Phys. Rev. Lett. 108, 127201 (2012)
R.N. Bhowmik, R. Ranganathan, Phys. Rev. B 74, 214417 (2006)
J.B. Goodenough, R.I. Dass, Internat. J. Inorg. Mat 2, 3 (2000)
J. Navarro, L. Balcells, F. Sandiumenge, M. Bibes, A. Roig, B. Martinez, J. Fontcuberta, J. Phys.: Condens. Matter 13, 8481 (2001)
A.S. Ogale, S.B. Ogale, R. Ramesh, T. Venkatesan, Appl. Phys. Lett 75, 537 (1999)
Y. Tomioka, T. Okuda, Y. Okimoto, R. Kumai, K.I. Kobayashi, Y. Tokura, Phys. Rev. B 61, 422 (2000)
K.-I. Kobayashi, T. Kimura, H. Sawada, K. Terakura, I. Tokura, Nature 395, 677 (1998)
M.H. Lewis, Defects in spinel crystals grown by the verneuil process. Phil. Mag. 14, 1003 (1966)
A.G. Fitzgerald, R. Engin, Thin Solid Films 20, 317 (1974)
Acknowledgements
The authors are grateful for the FEDER funds through the COMPETE 2020 Program and National Funds through FCT—Portuguese Foundation for Science and Technology under the project UID/CTM/50025/2019.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
On behalf of all authors, the corresponding author states that there are no conflicts of interest.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Nassar, K.I., Rammeh, N., Teixeira, S.S. et al. Effect of Pr substitution in the A site on the structural, dielectric and magnetic properties of double perovskite La2NiMnO6. Appl. Phys. A 128, 373 (2022). https://doi.org/10.1007/s00339-022-05520-1
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-022-05520-1