Abstract
Pb(Zr0.52Ti0.48)O3 (PZT)/LaNiO3 (LNO) thin films with highly (100) out of plane orientation were produced on SiO2/Si(100) and alkaline earth aluminosilicate glass substrates by pulsed laser deposition (PLD). Orientations of both PZT and LNO films were evaluated using X-ray diffraction. The pure (100)-oriented PZT/LNO films were obtained under optimized deposition conditions. Time of flight-secondary ion mass spectrometry analysis showed that LNO could effectively block interdiffusion between the PZT films and the substrates. Fairly smooth surfaces of the PZT films with roughness of about 4 nm were observed using an atomic force microscope. Cross sectional examination revealed that the films grew in columnar grains. The PZT films grown on both SiO2/Si and glass substrates demonstrated very good ferroelectric characteristic at room temperature with remnant polarization of up to 26 μC/cm2.
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79.20.DS; 77.84.DY; 78.70.Ck
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Yu, Y., Lai, M. & Lu, L. Highly (100) oriented Pb(Zr0.52Ti0.48)O3/LaNiO3 films grown on amorphous substrates by pulsed laser deposition. Appl. Phys. A 88, 365–370 (2007). https://doi.org/10.1007/s00339-007-3968-y
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DOI: https://doi.org/10.1007/s00339-007-3968-y