Pre-annealing effect of electroless Ni−B deposit as a diffusion barrier for electroplated Cu electrodes

Abstract

Ni−B film of 1 μm thickness was electrolessly deposited on an electroplated Cu bus electrode. The film, which encapsulates the Cu bus electrodes, prevents Cu oxidation and serves as a diffusion barrier against Cu contamination of the transparent dielectric layer in a plasma display during the firing process at 580 °C. The microstructure of theas-deposited barrier film was amorphous phase and crystallized to Ni and Ni₃B after annealing at 300 °C. The good barrier properties observed here can be explained by Ni₃B precipitates at the grain boundaries acting as a fast diffusion path via pre-annealing at 300 °C before the firing process at 580 °C.