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Capacitance behavior of GaAs-MIS structures with low-temperature grown GaAs dielectric

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Abstract

Low temperature (LT-) grown GaAs has been used as a dielectric in a metal/ dielectric/semiconductor structure, and its capacitance behavior has been investigated by C–VB} and admittance spectroscopy. The C-VB} measurement revealed a barrier height of 0.40 eV at the interface of the LT- and n-GaAs. The capacitance-temperature profile shows a step decrease in capacitance, accompanied by a maximum conductance as the measurement temperature was decreased. The detailed investigation shows that this anomalous C–T behavior is caused by the increase of resistivity of the LT-GaAs, which leads to the formation of a metal/insulator/semiconductor structure at low temperature. This result has an impact on the application of the LT-GaAs, because it introduces a frequency dispersion to the device characteristics.

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Author notes

  1. J. K. Luo

    Present address: Newport Wafer-Fab Ltd., Cardiff Road, Duffryn, NY9 1YJ, Newport, Gwent, UK

Authors and Affiliations

  1. Cardiff School of Engineering, University of Wales, Cardiff, UK

    J. K. Luo, D. Westwood, H. Thomas & D. V. Morgan

  2. Department of Physics & Astronomy, University of Wales College of Cardiff, UK

    D. Westwood

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  1. J. K. Luo
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  2. D. Westwood
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  3. H. Thomas
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  4. D. V. Morgan
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Luo, J.K., Westwood, D., Thomas, H. et al. Capacitance behavior of GaAs-MIS structures with low-temperature grown GaAs dielectric. J. Electron. Mater. 25, 1832–1836 (1996). https://doi.org/10.1007/BF02657161

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  • DOI: https://doi.org/10.1007/BF02657161

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