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Optical absorption edge of Cd1−x Mn x Ga2Se4 crystals

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Il Nuovo Cimento D

Summary

We report the absorption edge spectra of the new family of diluted magnetic semiconductors Cd1−x Mn x Ga2Se4 (0≤x≤1), grown from the vapour phase by chemical transport. Absorption bands observed under the gap of CdGa2Se4 are attributed to intra-Mn2+ transitions involving excited states of the 3d 5 electrons, split by the crystal field.

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Authors and Affiliations

  1. Dipartimento di Fisica «A. Vola» dell’Università, Via Bassi 6, I-27100, Pavia, Italia

    A. Borghesi, G. Guizzetti & A. Sassella

  2. ITSE-CNR-CP10, I-00016, Monterotondo Staz. (Roma), Italia

    M. G. Simeone & S. Viticoli

Authors
  1. A. Borghesi
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  2. G. Guizzetti
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  3. A. Sassella
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  4. M. G. Simeone
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  5. S. Viticoli
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Borghesi, A., Guizzetti, G., Sassella, A. et al. Optical absorption edge of Cd1−x Mn x Ga2Se4 crystals. Il Nuovo Cimento D 14, 33–39 (1992). https://doi.org/10.1007/BF02455342

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  • DOI: https://doi.org/10.1007/BF02455342

PACS 78.20.Wc

PACS 78.20

PACS 75.50.Pp

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