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Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

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Abstract

Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

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Authors and Affiliations

  1. NanO LaB-Departamento de Física, Universidade Federal de São Carlos, SãoCarlos, São Paulo, Brazil

    Luana S. Araujo & Adenilson Chiquito

  2. Faculdade de Engenharia de Guaratinguetá, Universidade Estadual Júlio de Mesquita Filho, Guaratinguetá, São Paulo, Brazil

    Olivia Berengue

  3. Laboratório Associado de Sensores e Materiais, LAS/INPE, São José dos Campos, São Paulo, Brazil

    Maurício Baldan & Neidenei Ferreira

  4. Instituto Federal de Educação, Ciência e Tecnologia de São Paulo, Bragança Paulista, São Paulo, Brazil

    João Moro

Authors
  1. Luana S. Araujo
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  2. Olivia Berengue
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  3. Maurício Baldan
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  4. Neidenei Ferreira
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  5. João Moro
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  6. Adenilson Chiquito
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Araujo, L.S., Berengue, O., Baldan, M. et al. Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling. MRS Online Proceedings Library 1634, 412 (2014). https://doi.org/10.1557/opl.2014.701

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