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Synthesis of large scale MoS2 for electronics and energy applications

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Abstract

Layered molybdenum disulfide (MoS2) has attracted great attention owing to its unique properties. However, synthesizing large area thin film with high crystal quality and uniformity remains a challenge. The present study explores large scale MoS2 growth methods, i.e., two-step method of sputtering-chemical vapor deposition and direct sputtering method, and applies them to fabricate field effect transistors and supercapacitors, respectively. The thickness modulated MoS2 films by two-step method exhibited high field effect mobility [∼12.24 cm2/(V s)] and current on/off ratio (∼106). The direct sputtering of MoS2 demonstrated excellent electrochemical performance with a high capacitance (∼30 mF/cm2) and cyclic stability upto 5000 cycles. Our growth methods reported here for the large scale MoS2 with high uniformity can trigger the development of several important technologies in two-dimensional materials.

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References

  1. D.J. Late, C.S. Rout, D. Chakravarty, and S. Ratha: Emerging energy applications of two-dimensional layered materials. Can. Chem. Trans. 3, 118 (2015).

    Google Scholar 

  2. J. Park, B. Jaeckel, and B. Parkinson: Fabrication and investigation of nanostructures on transition metal dichalcogenide surfaces using a scanning tunneling microscope. Langmuir 22, 5334 (2006).

    Article  CAS  Google Scholar 

  3. M. Chhowalla, H.S. Shin, G. Eda, L. Li, K.P. Loh, and H. Zhang: The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263 (2013).

    Article  Google Scholar 

  4. R. Ganatra and Q. Zhang: Few-layer MoS2: A promising layered semiconductor. ACS Nano 8, 4074 (2014).

    Article  CAS  Google Scholar 

  5. S.Z. Butler, S.M. Hollen, L. Cao, Y. Cui, J.A. Gupta, H.R. Gutiérrez, T.F. Heinz, S.S. Hong, J. Huang, and A.F. Ismach: Progress, challenges, and opportunities in two-dimensional materials beyond graphene. ACS Nano 7, 2898 (2013).

    Article  CAS  Google Scholar 

  6. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis: Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147 (2011).

    Article  CAS  Google Scholar 

  7. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis: Ultrasensitive photodetectors based on monolayer MoS2. Nat. Nanotechnol. 8, 497 (2013).

    Article  CAS  Google Scholar 

  8. P. Vabbina, N. Choudhary, A. Chowdhury, R. Sinha, M. Karabiyik, S. Das, W. Choi, and N. Pala: Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction. ACS Appl. Mater. Interfaces 7, 15206 (2015).

    Article  CAS  Google Scholar 

  9. Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, and M.S. Strano: Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699 (2012).

    Article  CAS  Google Scholar 

  10. H. Wang, Z. Lu, S. Xu, D. Kong, J.J. Cha, G. Zheng, P.C. Hsu, K. Yan, D. Bradshaw, F.B. Prinz, and Y. Cui: Electrochemical tuning of vertically aligned MoS2 nanofilms and its application in improving hydrogen evolution reaction. Proc. Natl. Acad. Sci. U. S. A. 110, 19701 (2013).

    Article  CAS  Google Scholar 

  11. V. Nicolosi, M. Chhowalla, M.G. Kanatzidis, M.S. Strano, and J.N. Coleman: Liquid exfoliation of layered materials. Science 340, 1226419 (2013).

    Article  Google Scholar 

  12. S. Das, M. Kim, J. Lee, and W. Choi: Synthesis, properties, and applications of 2-D materials: A comprehensive review. Crit. Rev. Solid State Mater. Sci. 39, 231 (2014).

    Article  CAS  Google Scholar 

  13. K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, S.V. Morozov, and A.K. Geim: Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. U. S. A. 102, 10451 (2005).

    Article  CAS  Google Scholar 

  14. A.M. van der Zande, P.Y. Huang, D.A. Chenet, T.C. Berkelbach, Y. You, G-H. Lee, T.F. Heinz, D.R. Reichman, D.A. Muller, and J.C. Hone: Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 12, 554 (2013).

    Article  Google Scholar 

  15. N. Choudhary, D. Kharat, and D. Kaur: Structural, electrical and mechanical properties of magnetron sputtered NiTi/PZT/TiOx thin film heterostructures. Surf. Coat. Technol. 205, 3387 (2011).

    Article  CAS  Google Scholar 

  16. R. Bromley: The lattice vibrations of the MoS2 structure. Philos. Mag. 23, 1417 (1971).

    Article  CAS  Google Scholar 

  17. K.F. Mak, C. Lee, J. Hone, J. Shan, and T.F. Heinz: Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

    Article  Google Scholar 

  18. J. Park, N. Choudhary, J. Smith, G. Lee, M. Kim, and W. Choi: Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices. Appl. Phys. Lett. 106, 012104 (2015).

    Article  Google Scholar 

  19. C. Yim, M. O’Brien, N. McEvoy, S. Winters, I. Mirza, J.G. Lunney, and G.S. Duesberg: Investigation of the optical properties of MoS2 thin films using spectroscopic ellipsometry. Appl. Phys. Lett. 104, 103114 (2014).

    Article  Google Scholar 

  20. J. Yoon, W. Park, G. Bae, Y. Kim, H.S. Jang, Y. Hyun, S.K. Lim, Y.H. Kahng, W. Hong, and B.H. Lee: Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes. Small 9, 3295 (2013).

    CAS  Google Scholar 

  21. X.L. Li and Y.D. Li: Formation of MoS2 inorganic fullerenes (IFs) by the reaction of MoO3 nanobelts and S. Chem. — Eur. J. 9, 2726 (2003).

    Article  CAS  Google Scholar 

  22. Y. Zhan, Z. Liu, S. Najmaei, P.M. Ajayan, and J. Lou: Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8, 966 (2012).

    Article  CAS  Google Scholar 

  23. N. Choudhary, J. Park, J.Y. Hwang, and W. Choi: Growth of large-scale and thickness-modulated MoS2 nanosheets. ACS Appl. Mater. Interfaces 6, 21215 (2014).

    Article  CAS  Google Scholar 

  24. Z. Zeng, Z. Yin, X. Huang, H. Li, Q. He, G. Lu, F. Boey, and H. Zhang: Single-layer semiconducting nanosheets: High-yield preparation and device fabrication. Angew. Chem., Int. Ed. 50, 11093 (2011).

    Article  CAS  Google Scholar 

  25. Y. Yang, H. Fei, G. Ruan, C. **ang, and J.M. Tour: Edge-oriented MoS2 nanoporous films as flexible electrodes for hydrogen evolution reactions and supercapacitor devices. Adv. Mater. 26, 8163 (2014).

    Article  CAS  Google Scholar 

  26. R. Christy: Sputtered MoS2 lubricant coating improvements. Thin Solid Films 73, 299 (1980).

    Article  CAS  Google Scholar 

  27. C. Muratore, J. Hu, B. Wang, M. Haque, J. Bultman, M. Jespersen, P. Shamberger, M. McConney, R. Naguy, and A. Voevodin: Continuous ultra-thin MoS2 films grown by low-temperature physical vapor deposition. Appl. Phys. Lett. 104, 261604 (2014).

    Article  Google Scholar 

  28. T. Alam, B. Wang, R. Pulavarthy, M. Haque, C. Muratore, N. Glavin, A.K. Roy, and A.A. Voevodin: Domain engineering of physical vapor deposited two-dimensional materials. Appl. Phys. Lett. 105, 213110 (2014).

    Article  Google Scholar 

  29. Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, and L. Cao: Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 3, 1866 (2013).

    Article  Google Scholar 

  30. P. Bertrand: Orientation of rf-sputter-deposited MoS2 films. J. Mater. Res. 4, 180 (1989).

    Article  CAS  Google Scholar 

  31. J.M. Soon and K.P. Loh: Electrochemical double-layer capacitance of MoS2 nanowall films. Electrochem. Solid-State Lett. 10, A250 (2007).

    Article  CAS  Google Scholar 

  32. N. Choudhary, M. Patel, Y. Ho, N.B. Dahotre, W. Lee, J.Y. Hwang, and W. Choi: Directly deposited MoS2 thin film electrodes for high performance supercapacitors. J. Mater. Chem. A 3, 24049 (2015).

    Article  CAS  Google Scholar 

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  1. These authors contributed equally to this manuscript.

Authors and Affiliations

  1. Department of Materials Science and Engineering, University of North Texas, Denton, Texas, 76207, USA

    Nitin Choudhary, Mumukshu D. Patel, Juhong Park & Ben Sirota

  2. Department of Materials Science and Engineering and Department of Mechanical and Energy Engineering, University of North Texas, Denton, Texas, 76207, USA

    Wonbong Choi

Authors
  1. Nitin Choudhary
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  2. Mumukshu D. Patel
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  3. Juhong Park
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  4. Ben Sirota
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  5. Wonbong Choi
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Correspondence to Wonbong Choi.

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Choudhary, N., Patel, M.D., Park, J. et al. Synthesis of large scale MoS2 for electronics and energy applications. Journal of Materials Research 31, 824–831 (2016). https://doi.org/10.1557/jmr.2016.100

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