Abstract
In this work, we present a detailed investigation of the growth of palladium-seeded GaAs nanowires. Nanowires grown on GaAs (111)B substrates consist of three different morphologies, denoted as curly (containing multiple kinks), inclined (relative to the substrate, such as 〈001〉), and vertical. We show that the relative yield of the different types is controllable by a combination of V/III ratio and temperature, where vertical and inclined nanowires are promoted by a high temperature and low V/III ratio. These growth conditions are expected to promote a higher Ga incorporation into the Pd particle, which is confirmed by energy dispersive x-ray analysis. We propose that the observed relationship between particle composition and nanowire morphology may be related to the particle phase, with liquid particles promoting straight nanowire growth. In addition, particles at the tips of nanowires are sometimes observed to be smaller than the initial particle size, suggesting that Pd has been lost during the growth process. Finally, we demonstrate the importance of initial particle size-control to interpret diameter changes after growth.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig1.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig2.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig3.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig4.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig5.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig6.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig7.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig8.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_Fig9.jpg)
Similar content being viewed by others
References
K.A. Dick: A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires. Prog. Cryst. Growth Charact. Mater. 54(3–4), 138–173 (2008).
A.J. Tavendale and S.J. Pearton: Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel. J. Phys. C: Solid State Phys. 16(9), 1665–1673 (1983).
J. Hornstra: Dislocations in the diamond lattice. J. Phys. Chem. Solids 5(1–2), 129–141 (1958).
M.D. Schroer and J.R. Petta: Correlating the nanostructure and electronic properties of InAs nanowires. Nano Lett. 10(5), 1618–1622 (2010).
C. Thelander, P. Caroff, S. Plissard, A.W. Dey, and K.A. Dick: Effects of crystal phase mixing on the electrical properties of InAs nanowires. Nano Lett. 11(6), 2424–2429 (2011).
H. Xu, Y. Wang, Y. Guo, Z. Liao, and Q. Gao: Defect-free <110> zinc-blende structured InAs nanowires catalyzed by palladium. Nano Lett. 12, 5744–5749 (2012).
I. Regolin, V. Khorenko, W. Prost, F.J. Tegude, D. Sudfeld, J. Kästner, G. Dumpich, K. Hitzbleck, and H. Wiggers: GaAs whiskers grown by metal-organic vapor-phase epitaxy using Fe nanoparticles. J. Appl. Phys. 101(5), 1–5 (2007).
S. Heun, B. Radha, D. Ercolani, G.U. Kulkarni, F. Rossi, V. Grillo, G. Salviati, F. Beltram, and L. Sorba: Coexistence of vapor-liquid-solid and vapor-solid-solid growth modes in Pd-assisted InAs nanowires. Small 6(17), 1935–1941 (2010).
S. Heun, B. Radha, D. Ercolani, G.U. Kulkarni, F. Rossi, V. Grillo, G. Salviati, F. Beltram, and L. Sorba: Pd-assisted growth of InAs nanowires. Cryst. Growth Des. 10(9), 4197–4202 (2010).
K. Hillerich, D.S. Ghidini, K.A. Dick, K. Deppert, and J. Johansson: Cu particle seeded InP–InAs axial nanowire heterostructures. Phys. Status Solidi RRL 7(10), 850–854 (2013).
R. Sun, D. Jacobsson, I-J. Chen, M. Nilsson, C. Thelander, S. Lehmann, and K.A. Dick: Sn-seeded GaAs nanowires as self-assembled radial p-n junctions. Nano Lett. 15(6), 3757–3762 (2015).
F. Martelli, S. Rubini, M. Piccin, G. Bais, F. Jabeen, S. De Franceschi, V. Grillo, E. Carlino, F. D’Acapito, F. Boscherini, S. Cabrini, M. Lazzarino, L. Businaro, F. Romanato, and A. Franciosi: Manganese-induced growth of GaAs nanowires. Nano Lett. 6(9), 2130–2134 (2006).
F. Jabeen, M. Piccin, L. Felisari, V. Grillo, G. Bais, S. Rubini, F. Martelli, F. D’Acapito, M. Rovezzi, and F. Boscherini: Mn-induced growth of InAs nanowires. J. Vac. Sci. Technol., B 28(3), 478 (2010).
A.T. Vogel, J. de Boor, M. Becker, J.V. Wittemann, S.L. Mensah, P. Werner, and V. Schmidt: Ag-assisted CBE growth of ordered InSb nanowire arrays. Nanotechnology 22(1), 015605 (2011).
D.D. Fanfair and B.A. Korgel: Bismuth nanocrystal-seeded III-V semiconductor nanowire synthesis. Cryst. Growth Des. 5(5), 1971–1976 (2005).
H-Z. Zhuang, B.L. Li, C.S. Xue, X. Zhang, S.Y. Zhang, D-X. Wang, and J.B. Shen: Growth of Nb-catalysed GaN nanowires. Microelectron. J. 39(12), 1629–1633 (2008).
X. Weng, R. Burke, and J. Redwing: The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal–organic chemical vapor deposition. Nanotechnology 20, 1–5 (2009).
H. Li, C. Xue, H. Zhuyang, J. Chen, Z. Yang, L. Qin, Y. Huang, and D. Zhang: Synthesis and characterization of GaN nanowires with Tantalum catalyst. Mater. Chem. Phys. 109(2–3), 249–252 (2008).
J. Chen, C. Xue, H. Zhuang, L. Qin, H. Li, and Z. Yang: Synthesis of GaN nanowires by Tb catalysis. Appl. Surf. Sci. 254(15), 4716–4719 (2008).
R.S. Wagner and W.C. Ellis: Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4(5), 89–90 (1964).
A.I. Persson, M.W. Larsson, S. Stenström, B.J. Ohlsson, L. Samuelson, and L.R. Wallenberg: Solid-phase diffusion mechanism for GaAs nanowire growth. Nat. Mater. 3(10), 677–681 (2004).
Y.C. Chou, C.Y. Wen, M.C. Reuter, D. Su, E.A. Stach, and F.M. Ross: Controlling the growth of Si/Ge nanowires and heterojunctions using silver-gold alloy catalysts. ACS Nano 6(7), 6407–6415 (2012).
F.M. Ross, C-Y. Wen, S. Kodambaka, B.A. Wacaser, M.C. Reuter, and E.A. Stach: The growth and characterization of Si and Ge nanowires grown from reactive metal catalysts. Philos. Mag. 90(20), 2807–2816 (2010).
S. Kodambaka, J. Tersoff, M.C. Reuter, and F.M. Ross: Germanium nanowire growth below the eutectic temperature. Science 316(5825), 729–732 (2007).
S. Hofmann, R. Sharma, C.T. Wirth, F. Cervantes-Sodi, C. Ducati, T. Kasama, R.E. Dunin-Borkowski, J. Drucker, P. Bennett, and J. Robertson: Ledge-flow-controlled catalyst interface dynamics during Si nanowire growth. Nat. Mater. 7(5), 372–375 (2008).
K. Hillerich, K.A. Dick, M.E. Messing, K. Deppert, and J. Johansson: Simultaneous growth mechanisms for Cu-seeded InP nanowires. Nano Res. 5(5), 297–306 (2012).
B.O. Meuller, M.E. Messing, D.L.J. Engberg, A.M. Jansson, L.I.M. Johansson, S.M. Norlén, N. Tureson, and K. Deppert: Review of spark discharge generators for production of nanoparticle aerosols. Aerosol Sci. Technol. 46(11), 1256–1270 (2012).
J. Johansson, K.A. Dick, P. Caroff, M.E. Messing, J. Bolinsson, K. Deppert, and L. Samuelson: Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires. J. Phys. Chem. C 114(9), 3837–3842 (2010).
B.M. Borg, J. Johansson, K. Storm, and K. Deppert: Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays. J. Cryst. Growth 366, 15–19 (2013).
K. Storm: NanoDim Software. http://nanodim.kristian.storm.com (accessed December 03 2015).
B. Predel: Ga-Pd (Gallium-Palladium). In Landolt-Börnstein — Group IV Physical Chemistry, Ga-Gd — Hf-Zr, O. Madelung, ed. (Springer-Verlag: Berlin, 1996); pp. 57–59.
S.V. Thombare, A.F. Marshall, and P.C. McIntyre: Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst. J. Appl. Phys. 112(054325), 0–6 (2012).
C-Y. Wen, J. Tersoff, M.C. Reuter, E.A. Stach, and F.M. Ross: Step-flow kinetics in nanowire growth. Phys. Rev. Lett. 105(19), 1–4 (2010).
H. Xu, Y. Guo, Z. Liao, and W. Sun: Catalyst size dependent growth of Pd-catalyzed one-dimensional InAs nanostructures. Appl. Phys. Lett. 102, 203108 (2013).
V. Schmidt: Diameter-dependent growth direction of epitaxial silicon nanowires. Nano Lett. 5(5), 931–935 (2005).
R.G. Cai, Y. Gong, and B. Wang: The size-dependent growth direction of ZnSe nanowires. Adv. Mater. 18, 109–114 (2006).
Z. Zhang, K. Zheng, Z-Y. Lu, P-P. Chen, W. Lu, and J. Zou: Catalyst orientation-induced growth of defect-free zinc-blende structured \(\left\langle {00\bar 1} \right\rangle \) InAs nanowires. Nano Lett. 15, 876–882 (2015).
H.J. Joyce, Q. Gao, H.H. Tan, C. Jagadish, Y. Kim, X. Zhang, Y. Guo, and J. Zou: Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process. Nano Lett. 7(4), 921–926 (2007).
ACKNOWLEDGMENTS
The authors acknowledge financial support from the European Research Council under the European Union’s Seventh Framework Program (FP/2007–2013)/ERC Grant Agreement No. 336126, and from the Swedish Research Council (VR), the Knut and Alice Wallenberg Foundation (KAW) and the Nanometer Structure Consortium at Lund University (nmC@LU).
Author information
Authors and Affiliations
Corresponding author
Additional information
This paper has been selected as an Invited Feature Paper.
Supplementary Material
To view supplementary material for this article, please visit https://doi.org/10.1557/jmr.2015.400.
Supplementary Material
![](http://media.springernature.com/lw708/springer-static/esm/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_MOESM1_ESM.jpg)
![](http://media.springernature.com/lw192/springer-static/esm/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_MOESM2_ESM.jpg)
![](http://media.springernature.com/lw362/springer-static/esm/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_MOESM3_ESM.jpg)
![](http://media.springernature.com/lw360/springer-static/esm/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_MOESM4_ESM.jpg)
![](http://media.springernature.com/lw360/springer-static/esm/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_MOESM5_ESM.jpg)
![](http://media.springernature.com/lw362/springer-static/esm/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_MOESM6_ESM.jpg)
![](http://media.springernature.com/lw720/springer-static/esm/art%3A10.1557%2Fjmr.2015.400/MediaObjects/43578_2016_31020175_MOESM7_ESM.jpg)
Rights and permissions
About this article
Cite this article
Hallberg, R.T., Lehmann, S., Messing, M.E. et al. Palladium seeded GaAs nanowires. Journal of Materials Research 31, 175–185 (2016). https://doi.org/10.1557/jmr.2015.400
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/jmr.2015.400