Strain in BInGaN thin layers grown in nonpolar and semipolar directions

Abstract

Strain properties of BInGaN layers assumed to be grown on GaN, AlN and ZnO substrates in nonpolar and semipolar directions have been calculated. The strain components in the laboratory system have been presented as a function of boron and indium contents of the layer for each substrate. We have found that the in-plane strain components go up to $\approx$ 7, 10, and $6\%$ in magnitude in the cases of GaN, AlN, and ZnO substrates, respectively. The piezeolectric properties of the BInGaN layers assumed to be grown in semipolar direction have been computed, and the outcomes for selected values of the boron content have been plotted against the indium content. Finally, the built-in electric field values inside the well layers of BInGaN/GaN and BInGaN/AlN quantum wells, considered to be grown in the semipolar direction, have been figured out. According to the results, the field in both types of the quantum wells reaches the values as high as $\approx$ 10 MVcm$^{-1}$ in magnitude.

Graphical abstract