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Study of the Structural and Morphological Properties of HPHT Diamond Substrates

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
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Abstract

The morphological and structural properties of a series of high-pressure high-temperature (HPHT) single-crystal diamond substrates are comprehensively studied by white-light optical interference microscopy, atomic-force microscopy, and X-ray diffraction analysis. Procedures that provide a means for characterizing the substrate parameters most critical for epitaxial application with the laboratory equipment are described. It is shown that the jewelry-type characterization of diamond substrates is insufficient to assess the possibility of their use for the epitaxial growth of chemical-vapor-deposited (CVD) diamond.

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ACKNOWLEDGMENTS

The part of the study concerned with the preparation of substrates for epitaxy was supported by the Russian Science Foundation, project no. 17-19-01580.

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Authors and Affiliations

  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, Russia

    P. A. Yunin, P. V. Volkov, Yu. N. Drozdov, S. A. Korolev, E. A. Surovegina & V. I. Shashkin

  2. Institute of Applied Physics, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    D. B. Radischev

  3. New Diamond Technology, Ltd., 197706, St. Petersburg, Russia

    A. V. Koliadin

Authors
  1. P. A. Yunin
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  2. P. V. Volkov
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  3. Yu. N. Drozdov
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  4. A. V. Koliadin
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  5. S. A. Korolev
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  6. D. B. Radischev
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  7. E. A. Surovegina
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  8. V. I. Shashkin
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Correspondence to P. A. Yunin.

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Translated by E. Smorgonskaya

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Yunin, P.A., Volkov, P.V., Drozdov, Y.N. et al. Study of the Structural and Morphological Properties of HPHT Diamond Substrates. Semiconductors 52, 1432–1436 (2018). https://doi.org/10.1134/S1063782618110271

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  • DOI: https://doi.org/10.1134/S1063782618110271

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