Abstract
Three deep acceptor levels with activation energies of ~0.7, ~0.41, and ~0.16 eV are found in GaAs structures, which have the hole type of conductivity and are grown by liquid-phase epitaxy, by the methods of capacitance spectroscopy (admittance spectroscopy and deep-level transient spectroscopy). The first two levels are known as HL2 and HL5 and are related to the features of GaAs-layer growth by liquid-phase epitaxy. They are effective recombination centers determining reverse currents in p–i–n diodes, which is confirmed by studying the temperature dependences of reverse currents. The level with the energy Ev + 0.16 eV can be related to the two-charge acceptor level of the inherent antisite defect in GaAs, which also determines the do** concentration of structures in the singly charged state.
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Original Russian Text © A.V. Murel, V.B. Shmagin, V.L. Krukov, S.S. Strelchenko, E.A. Surovegina, V.I. Shashkin, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 11, pp. 1538–1542.
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Murel, A.V., Shmagin, V.B., Krukov, V.L. et al. Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy. Semiconductors 51, 1485–1489 (2017). https://doi.org/10.1134/S1063782617110197
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DOI: https://doi.org/10.1134/S1063782617110197