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Nernst-Ettingshausen effect in graphene

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Abstract

The Nernst-Ettingshausen effect corresponds to the regime of crossed magnetic and electric fields. In the current theoretical studies of this effect in graphene, the dependence of the Landau levels on the applied electric field is neglected. This dependence takes place in the case of the nonquadratic energy spectrum of the charge carriers. In this work, oscillations of the Nernst coefficient in graphene with a zero and nonzero band gap have been studied taking into account such dependence. The effect of the Coulomb interaction on these oscillations is considered.

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Authors and Affiliations

  1. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, 119991, Russia

    Z. Z. Alisultanov

  2. Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, Makhachkala, 367003, Russia

    Z. Z. Alisultanov

  3. Dagestan State University, Makhachkala, 367009, Russia

    Z. Z. Alisultanov

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  1. Z. Z. Alisultanov
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Correspondence to Z. Z. Alisultanov.

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Original Russian Text © Z.Z. Alisultanov, 2014, published in Pis’ma v Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2014, Vol. 99, No. 12, pp. 813–816.

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Alisultanov, Z.Z. Nernst-Ettingshausen effect in graphene. Jetp Lett. 99, 702–705 (2014). https://doi.org/10.1134/S0021364014120030

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  • DOI: https://doi.org/10.1134/S0021364014120030

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