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Analysis of Electronic Characteristics of Plasma-Enhanced Indium Zinc Oxide Thin Film Transistors

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Abstract

Indium zinc oxide (IZO) film has the characteristics of exceptional mobility and controllable resistivity. It is a promising oxide semiconductor material that is used to prepare oxide thin film transistors (TFTs). In this paper, a multi-stacked IZO TFT with exceptional electronic characteristics as a basic device is prepared by using a solution process. The plasma is injected into the active channel layer by simultaneously introducing O2 and N2 gas from an RF radical source. Depending on the oxygen flow concentration, the amount of plasma will also change, thereby showing which oxygen concentration will result in a more significant increase in electronic performance. Oxygen vacancies and lattice defects exist in the transport layer crystal. Oxygen plasma treatment can make the crystal structure more stable and optimize the electron mobility, the transfer of the multi-stacked IZO TFT, and the smoothness of the device surface. The amount of gas flow affects the optimization effect of the plasma on the device. The measured root mean square roughness is also ideally improved at a suitable gas flow rate. The improvement in multi-stacked IZO TFTs by the incorporation of plasma is obvious.

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Acknowledgements

This research was supported by the MSIT (Ministry of Science and ICT), Korea, under the Grand Information Technology Research Center support program (IITP-2021-2020-0-01462) supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation), and by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No. 2020R1A6A1A12047945).

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  1. Fei Shan and Suchang Yoo have contributed equally to this work.

Authors and Affiliations

  1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, 28644, South Korea

    Fei Shan, Suchang Yoo, Jae-Yun Lee, Han-Lin Zhao, **ao-Lin Wang, Seong Gon Choi, Heung Gyoon Ryu & Sung-** Kim

  2. Department of Materials Science and Engineering, Korea National University of Transportation, 50 Daehak-ro, Chungju, Chungbuk, 27469, South Korea

    Yong ** Jeong

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  1. Fei Shan
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Correspondence to Seong Gon Choi or Sung-** Kim.

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Shan, F., Yoo, S., Lee, JY. et al. Analysis of Electronic Characteristics of Plasma-Enhanced Indium Zinc Oxide Thin Film Transistors. J. Electr. Eng. Technol. 18, 509–514 (2023). https://doi.org/10.1007/s42835-022-01169-1

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