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Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

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Abstract

In comparison to monolayer (1L), multilayer (ML) two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability, higher mobility, and broader spectral response. However, the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films. In this work, we propose a strategy of stacking MoS2 monolayers via a vacuum transfer method, by which one could obtain wafer-scale high-quality MoS2 films with the desired number of layers at will. The optical characteristics of these stacked ML-MoS2 films (> 2L) indicate a weak interlayer coupling. The stacked ML-MoS2 phototransistors show improved optoelectrical performances and a broader spectral response (approximately 300–1,000 nm) than that of 1L-MoS2. Additionally, the dual-gate ML-MoS2 transistors enable enhanced electrostatic control over the stacked ML-MoS2 channel, and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

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Acknowledgements

This work was supported by the National Key Research and Development Program of China (Nos. 2021YFA1200500 and 2018YFA0703700), in part by the National Natural Science Foundation of China (No. 61774042), the Innovation Program of Shanghai Municipal Education Commission (No. 2021-01-07-00-07-E00077), and Shanghai Municipal Science and Technology Commission (Nos. 21DZ1100900 and 20ZR1403200).

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Authors and Affiliations

  1. State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China

    **aojiao Guo, Honglei Chen, Jihong Bian, **gyi Ma, Simeng Zhang, Lingyi Zong, Yin **a, Chuming Sheng, Saifei Gou, **nyu Wang, Liwei Liu, **xi Jiang, Peng Zhou, **nyu Chen, Ling Tong & Wenzhong Bao

  2. The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, China

    Fuyou Liao

  3. Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai, 200433, China

    **nzhi Zhang & Zhenghua An

  4. State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai, 200433, China

    Junqiang Zhu, Chunxiao Cong & Zhijun Qiu

  5. Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering, East China Normal University, Shanghai, 200241, China

    Chen Luo, Zijian Zhang & **ng Wu

  6. Shenzhen Six Carbon Technology, Shenzhen, 518055, China

    Zihan Xu

  7. Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai, 200433, China

    Peng Gong

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  1. **aojiao Guo
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  2. Honglei Chen
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  3. Jihong Bian
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  9. Chen Luo
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  26. Ling Tong
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  27. Wenzhong Bao
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Correspondence to **nyu Chen, Ling Tong or Wenzhong Bao.

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Guo, X., Chen, H., Bian, J. et al. Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors. Nano Res. 15, 6620–6627 (2022). https://doi.org/10.1007/s12274-022-4280-z

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