Abstract
POCl3 diffusion is currently the de facto standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O2 flow rate, and thermal oxidation temperature. By showing their influence on the emitter do** profile and recombination activity, we provide an overall strategy for improving industrial POCl3 tube diffused emitters.
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Li, H., Kim, K., Hallam, B. et al. POCl3 diffusion for industrial Si solar cell emitter formation. Front. Energy 11, 42–51 (2017). https://doi.org/10.1007/s11708-016-0433-7
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DOI: https://doi.org/10.1007/s11708-016-0433-7