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Fabrication and Description of Amorphous Ge33Se47Sn20 Films for Optical Applications

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Abstract

We report the fabrication of a semiconductor thin layer of ternary chalcogenide, Ge33Se47Sn20, utilizing a thermal evaporation technique for optical applications. The chemical composition and crystal structure studies on Ge33Se47Sn20 thin films were carried out by energy-dispersive x-ray and x-ray diffraction measurements. The effect of ultraviolet (UV) irradiation on the linear and nonlinear optical properties of the Ge33Se47Sn20 thin films has been investigated from the UV–Visible spectra. The studied optical parameters of the virgin and UV-irradiated Ge33Se47Sn20 thin films were found to be strongly dependent upon UV irradiation time. The changes in the optical band gap of the Ge33Se47Sn20 thin films upon UV irradiation are due to bonding rearrangements. The significant changes in linear/nonlinear optical parameters with UV irradiation are useful for linear/nonlinear optical applications.

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Acknowledgments

The researchers would like to acknowledge Deanship of Scientific Research, Taif University for funding this work.

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Authors and Affiliations

  1. Department of Physics, College of Science and Humanities, Shaqra University, Al Quwaiiyah, Saudi Arabia

    A. M. Hassanien

  2. Department of Physics, Faculty of Science, University of Tabuk, 71491, Tabuk, Saudi Arabia

    A. A. A. Darwish

  3. Nanotechnology Research Unit, Faculty of Science, University of Tabuk, 71491, Tabuk, Saudi Arabia

    A. A. A. Darwish

  4. Department of Physics, Faculty of Science, Zarqa University, Zarqa, 13132, Jordan

    Saleem I. Qashou

  5. Department of Physics, College of Science, Taif University, P.O. Box 11099, 21944, Taif, Saudi Arabia

    A. A. Atta

  6. Department of Chemistry, College of Science, Taif University, P.O. Box 11099, 21944, Taif, Saudi Arabia

    Tariq A. Altalhi

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Hassanien, A.M., Darwish, A.A.A., Qashou, S.I. et al. Fabrication and Description of Amorphous Ge33Se47Sn20 Films for Optical Applications. J. Electron. Mater. 52, 4495–4502 (2023). https://doi.org/10.1007/s11664-023-10329-6

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