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Optical and Electrical Properties of In-doped ZnO Films via the Spray Pyrolysis Technique for Optoelectronics Device Applications

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Abstract

Indium-doped ZnO thin films were prepared using the spray pyrolysis technique, and their electrical properties were investigated. The films were characterized using different techniques, including x-ray diffraction (XRD), scanning electron microscopy, energy-dispersive x-ray analysis, UV–Vis spectroscopy, and Hall measurements. The XRD pattern confirmed that all films had a polycrystalline hexagonal wurtzite crystal structure. An undoped ZnO film showed a preferred crystalline orientation along the (002) peak, while for In-doped ZnO thin films, the preferred orientation changed from the (002) peak to the (101) peak. The surface morphology of the ZnO film changed from a hexagonal nanorod-like structure to a nanorod structure after indium do**. The presence of zinc, oxygen, and indium elements was confirmed by an energy-dispersive spectrometer. Optical studies showed transmittance of 80% for the deposited films, and it decreased with In do**. The optical band gap increased with indium concentration. Hall effect measurements revealed that all the films showed n-type conductivity. The films deposited at 2% In content were found to have relatively low resistivity of 0.937 Ω cm.

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  1. Thin Film and Material Science Research Laboratory, Department of Physics, Dayanand Science College, Latur, Maharashtra, 413512, India

    L. H. Kathwate & V. D. Mote

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Kathwate, L.H., Mote, V.D. Optical and Electrical Properties of In-doped ZnO Films via the Spray Pyrolysis Technique for Optoelectronics Device Applications. J. Electron. Mater. 51, 6894–6902 (2022). https://doi.org/10.1007/s11664-022-09918-8

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