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Conversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Do**

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Abstract

CuO films with Zr do** were successfully fabricated on substrates of soda-lime glass (SLG) using a spin-coating method at various do** concentrations. X-ray diffraction (XRD) patterns for pure and Zr-doped CuO thin films indicated that all thin CuO films have a monoclinic polycrystalline nature, with two maximum peaks (−111) and (111). The dislocation density values of the (−111) and (111) planes are increased from 13.4 × 1014 to 34.9 × 1014 m−2 and from 26 × 1014 to 42.7 × 1014 m−2, respectively, owing to the expansion of structural parameters with Zr dopant content. Scanning electron microscopy (SEM) indicated nanostructure particles uniformly distributed on all thin-film surfaces without any agglomerated nanostructure particles. The thickness of CuO films in conjunction with Zr do** is approximately 460 nm. The EDX spectrum of pure CuO in thin film contains Cu and O elements; 1%, 2%, and 3% Zr-doped CuO thin films contain Zr, Cu, and O elements, as expected. Atomic force microscopy (AFM) figures indicate that the surface topologies of thin films are uniformly distributed. Ultraviolet–visible spectroscopy (UV–Vis) measurements of the thin films revealed that the transmittance increased from 25% to 45% in the visible range with increasing Zr concentration at room temperature. The energy band gap increased from 1.67 to 2.03 eV with increasing Zr concentration. At room temperature, a Hall effect system was used to investigate the electrical parameters, including carrier concentration, resistivity, conductivity type, and hole mobility of the CuO films with Zr do**. Conductivity type conversion was observed with 2% and 3% Zr-doped CuO, and confirmed by capacity–voltage \((C-V\)) measurements. The charge-carrier concentration of the samples ranged from 1.08 × 1016 to 5.06 × 1018 cm−3 with Zr do**. Thus, the optical and electrical properties of CuO thin film such as the band gap energy, transmittance, and carrier mobility can be modified.

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Funding

This study was funded by the Scientific Research Projects Coordination Unit of Dicle University for the support with the number FEN.18.007.

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  1. Department of Physics, Faculty of Science, Dicle University, Diyarbakır, Turkey

    Şilan Baturay

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Baturay, Ş. Conversion from p- to n-Type Conductivity in CuO Thin Films Through Zr Do**. J. Electron. Mater. 51, 5644–5654 (2022). https://doi.org/10.1007/s11664-022-09836-9

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