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Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices

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Abstract

Phase change random access memory (PCRAM) affords many advantages over conventional solid-state memories due to its nonvolatility, high speed, and scalability. However, high programming current to amorphize the crystalline phase through the melt-quench process of PCRAM, known as the RESET current, poses a critical challenge and has become the most significant obstacle for its widespread commercialization. In this work, an excellent negative tone resist for high resolution electron beam lithography, hydrogen silsesquioxane (HSQ), has been investigated as the insulating material which locally blocks the contact between the bottom electrode and the phase change material in PCRAM devices. Fabrications of the highly scaled HSQ nanopore arrays (as small as 16 nm) are presented. The insulating properties of the HSQ material are studied, especially under e-beam exposure plus thermal curing. Some other critical issues about the thickness adjustment of HSQ films and the influence of the PCRAM electrode on electron scattering in e-beam lithography are discussed. In addition, the HSQ material was successfully integrated into the PCRAM devices, achieving ultra-low RESET current (sub-100 μA), outstanding on/off ratios (~50), and improved endurance at tens of nanometers.

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Acknowledgements

This work was supported by the National High-tech R&D Program (863 Program) (No. 2011AA010404), Program of International S&T Cooperation of the Ministry of science and technology (No. 2010D FA11050), Ph.D. Programs Foundation of Ministry of Education of China (No. 20090142110003). Major National Scientific Instrument and Equipment Development Project (No. 2011YQ160002). Thanks to Professor **a in the center of Micro-Fabrication and characterization (CMFC) of WNLO for the support in electron beam lithography.

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, China

    Jiao Zhou, Hongkai Ji, Tian Lan, Wenli Zhou & **angshui Miao

  2. School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei Province, China

    Jiao Zhou, Hongkai Ji, Tian Lan, Wenli Zhou & **angshui Miao

  3. Wuhan **n**n Semiconductor Manufacturing Corporation, Wuhan, China

    Junbing Yan

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  1. Jiao Zhou
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  2. Hongkai Ji
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  3. Tian Lan
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  5. Wenli Zhou
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  6. **angshui Miao
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Correspondence to Wenli Zhou.

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Zhou, J., Ji, H., Lan, T. et al. Investigation of the Hydrogen Silsesquioxane (HSQ) Electron Resist as Insulating Material in Phase Change Memory Devices. J. Electron. Mater. 44, 235–243 (2015). https://doi.org/10.1007/s11664-014-3390-0

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  • DOI: https://doi.org/10.1007/s11664-014-3390-0

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