SpringerLink
Log in

Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector

  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

In this paper, a mesa-type 256 × 8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice (T2SL) material with double barrier structure. The area of each pixel is 25 × 25 μm2. The cut-off wavelength and dark current density of the detector at −0.05 V bias with liquid nitrogen temperature are 11.5 μm and 4.1 × 10–4 A/cm2, respectively. The power spectral densities of low-frequency noise under different temperatures have also been fitted through the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which was ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insight into the low frequency noise characteristics of InAs/GaSb T2SL long-wavelength detectors, and allow us to understand the main source of low-frequency noise better.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig.1
Fig.2
Fig.3
Fig. 4
Fig. 5
Fig.6

Similar content being viewed by others

References

  • Bae, S.H., Lee, S.J., Kim, Y.H., Lee, H.C., Kim, C.K.: Analysis of 1/f noise in LWIR HgCdTe photodiodes. J. Electron. Mater. 29(6), 877–882 (2000)

    Article  ADS  Google Scholar 

  • Carras, M., Reverchon, J.L., Marre, G., Renard, C., Vinter, B., Marcadet, X., Berger, V.: Interface band gap engineering in InAsSb photodiodes. Appl. Phys. Lett. 87(10), 102103 (2005)

    Article  ADS  Google Scholar 

  • Ciura, Ł, Kolek, A., Wróbel, J., Gawron, W., Rogalski, A.: 1/f Noise in mid-wavelength infrared detectors with InAs/GaSb superlattice absorber. Trans. Electron Dev. 62(6), 2022–2026 (2015)

    Article  ADS  Google Scholar 

  • Ciura, Ł, Kopytko, M., Martyniuk, P.: Low-frequency noise limitations of InAsSb-, and HgCdTe-based infrared detectors. Sensors Actuat A-Phys. 305, 111908 (2020)

    Article  Google Scholar 

  • Ciura, Ł, Kolek, A., Jure´nczyk, J., Czuba, K., Jasik, A., Sankowska, I., Kaniewski, J.: 1/f Noise modeling of InAs/GaSb superlattice midwavelength infrared detectors. Optical Quantum Electron. 50(1), 36 (2018)

    Article  Google Scholar 

  • Ciura, Ł, Jasik, A., Czuba, K.: Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors. Appl. Phys. Lett. 118(26), 263501 (2021)

    Article  ADS  Google Scholar 

  • Ciura, Ł, Kolek, A., Jure´nczyk, J., Czuba, K., Jasik, A., Sankowska, I., Papis-Polakowska, E., Kaniewski, J.: Noise-current correlations in InAs/GaSb Type-II superlattice midwavelength infrared detectors. IEEE Trans. Electron Devices 63(12), 4907–4912 (2016)

    Article  ADS  Google Scholar 

  • Dyakonova, N., Karandashev, S.A., Levinshtein, M.E., Matveev, B.A., Remennyi, M.A.: Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: photovoltaic mode and forward bias. Infrared Phys. Technol. 111, 103460 (2020)

    Article  Google Scholar 

  • Geremew, A., Qian, C., Abelson, A., Rumyantsev, S., Kargar, F., Law, M., Balandin, A.A.: Low-frequency electronic noise in superlattice and random-packed thin films of colloidal quantum dots. Nanoscale 11(42), 20171–20178 (2019)

    Article  Google Scholar 

  • Haddadi, A., Darvish, S., Chen, G., Hoang, A.M., Nguyen, B.M., et al.: Low frequency noise in 1024x1024 long wavelength infrared focal plane array based on type-II InAs/GaSb superlattice. Quantum Sens. Nanophoton. Dev. IX. 8268, 82680X (2012)

    Article  Google Scholar 

  • Hanafi, H.I., van der Ziel, A.: flicker noise due to grain-boundaries in n-type Hg1−xCdxTe. Solid-State Electron. 21(8), 1019–1021 (1978)

    Article  ADS  Google Scholar 

  • Hu, W.D., Chen, X.S., Ye, Z.H., Lu, W.: A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density Hydrogen plasma modification. Appl. Phys. Lett. 99(9), 091101 (2011)

    Article  ADS  Google Scholar 

  • Hu, W.D., Ye, Z.H., Liao, L., Chen, H.L., Chen, L., Ding, R.J., He, L., Chen, X.S., Lu, W.: 128 x 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk. Opt. Lett. 39(17), 5184–5187 (2014)

    Article  ADS  Google Scholar 

  • Liu, Y.F., Zhang, C.J., Wang, X.B., Wu, J., Huang, L.: Interface investigation of InAs/GaSb type II superlattice for long wavelength infrared photodetectors. Infrared Phys. Technol. 113, 103573 (2021)

    Article  Google Scholar 

  • Meng, C.X., Li, J.L., Yu, L., Wang, X.M., Han, P., Yan, F., Xu, Z.H., Chen, J.X., Ji, X.L.: Investigation of noise source and its impact on photocurrent performance of long wave infrared InAs/GaSb type II superlattice detectors. Opt. Express 28(10), 14753–14761 (2020)

    Article  ADS  Google Scholar 

  • Mohseni, H., Litvinov, V.I., Razeghi, M.: Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices. Phys. Rev. B. 58(23), 15378–15380 (1998)

    Article  ADS  Google Scholar 

  • Nguyen, J., Ting, D.Z., Hill, C.J., Soibel, A., Keo, S.A., Gunapala, S.D.: Dark current analysis of InAs/GaSb superlattices at low temperatures. Infrared Phys. Technol. 52(6), 317–321 (2009)

    Article  ADS  Google Scholar 

  • Tobin, S.P., Iwasa, S., Tredwell, T.J.: 1/f noise in (Hg, Cd)Te photo-diodes. Trans. Electron Dev. 27(1), 43–48 (1980)

    Article  ADS  Google Scholar 

  • Smith, D.L., Mailhiot, C.: Proposal for strained type II superlattice infrared detectors. J. Appl. Phys. 62(6), 2545–2548 (1987)

    Article  ADS  Google Scholar 

  • Wan, L.H., Shao, X.M., Ma, Y.J., Deng, S.Y., Liu, Y.G., Cheng, J.F.Y.G., Li, T., Li, X.: Dark current and 1/f noise characteristics of In0.74Ga0.26As photodiode passivated by SiNx/Al2O3 bilayer. Infrared Phys. Technol. 109, 103389 (2020)

    Article  Google Scholar 

  • Wang L, Xu Z, Xu J, Dong F, Wang F, Bai Z, Zhou Y, Chai X, Li H, Ding R, Chen J.: Fabrication and characterization of InAs/GaSb type-II superlattice long-wavelength infrared detectors aiming high temperature sensitivity. IEEE J. Lightwave Technol. 38(21), 6129–6134 (2020)

    ADS  Google Scholar 

  • Westerhout, R.J., Musca, C.A., Antoszewski, J., Dell, J.M., Faraone, L.: Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes. J. Electron Mater. 36(8), 884–889 (2007)

    Article  ADS  Google Scholar 

  • Wu, D.H., Li, J.K., Dehzangi, A., Razeghi, M.: High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier. Infrared Phys. Technol. 109, 103439 (2020)

    Article  Google Scholar 

  • Zhu, L.Q., Deng, Z., Huang, J., Guo, H.J., Chen, L., Lin, C., Chen, B.L.: Low frequency noise-dark current correlations in HgCdTe infrared photodetectors. Opt. Express 28(16), 23660–23669 (2020)

    Article  ADS  Google Scholar 

Download references

Funding

National Natural Science Foundation of China,61904183, 61974152, Liang Wang, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Y202057, Liang Wang, Shanghai Rising-Star Program, 20QA1410500, Liang Wang.

Author information

Authors and Affiliations

  1. University of Chinese Academy of Sciences, Bei**g, China

    Wang Liang, Zhu Liqi & Chen Jianxin

  2. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China

    Wang Liang, Zhu Liqi, Xu Zhicheng, Wang Fangfang & Chen Jianxin

  3. School of Information Science and Technology, Shanghai Tech University, 393 Middle Huaxia Road, Shanghai, 201210, China

    Zhu Liqi & Chen Baile

Authors
  1. Wang Liang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Zhu Liqi
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Xu Zhicheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Wang Fangfang
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Chen Jianxin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Chen Baile
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Chen Jianxin.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Liang, W., Liqi, Z., Zhicheng, X. et al. Investigation of low frequency noise-current correlation for the InAs/GaSb type-II superlattice long-wavelength infrared detector. Opt Quant Electron 54, 286 (2022). https://doi.org/10.1007/s11082-021-03450-5

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11082-021-03450-5

Keywords

Search

Navigation