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The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode

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Abstract

The Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the CCTS based Al/Cu2CdSnS4 (CCTS)/p-Si/Al photodiode was produced. The prepared CCTS film was analyzed using various characterization methods such as energy-dispersive X-ray (EDX or EDS), scanning electron microscopy, and ultraviolet-visible (UV-Vis) spectroscopy. Optoelectronic and electronic attributes of the generated photodiode were investigated under the solar light and frequency conditions. The obtained data from the current measurements based on illumination intensity showed that the generated diode exhibits a photovoltaic and photoconductive behavior. In addition, it is found that the conductance and capacitance features of the diode were quite sensitive to frequency. The obtained outcomes indicated that the produced structure could be used in optoelectronic technology, especially in photodiode and solar cell applications.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

The authors would like to acknowledge the support of FIRAT University Scientific Research Projects Management Unit for this research through ADEP 2305 and King Khalid University for this research through grant no. RCAMS/KKU/p002-21 under the Research Center for Advanced Materials Science at King Khalid University, Kingdom of Saudi Arabia.

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Authors and Affiliations

  1. Department of Chemistry, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  2. Research Center for Advanced Materials Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  3. Unit of Science and Technology, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, 61413, Saudi Arabia

    Abdullah G. Al-Sehemi

  4. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    A. Tataroğlu

  5. Vocational School of Technical Sciences, Firat University, 23119, Elazig, Turkey

    Aysegul Dere

  6. Department of Basic Sciences, Faculty of Science, Erzurum Technical University, Erzurum, Turkey

    Abdulkerim Karabulut

  7. Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia

    Ahmed A. Al-Ghamdi & F. Yakuphanoğlu

  8. Department of Physics, Faculty of Science, Fırat University, Elazığ, Turkey

    F. Yakuphanoğlu

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  1. Abdullah G. Al-Sehemi
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  2. A. Tataroğlu
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Contributions

AT: Investigation, Methodology, Electrical Analysis. AD: Investigation, Methodology, Electrical Analysis. AGA: Preparation of materials, Investigation. AK: Investigation, Conceptualization, Writing, Review & editing, Supervision. AAA: Investigation, Morphological Analysis. FY: Investigation, Conceptualization, Writing, Supervision.

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Correspondence to Abdulkerim Karabulut.

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Al-Sehemi, A.G., Tataroğlu, A., Dere, A. et al. The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode. J Mater Sci: Mater Electron 34, 2024 (2023). https://doi.org/10.1007/s10854-023-11465-9

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