Abstract
Ga doped CdS thin films were deposited on Soda Lime Glass substrates by Chemical Bath Deposition (CBD) method while concentrations of Gallium was varied during do**. X-ray Diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscope (AFM), UV/VIS/NIR Lambda 9/19 double beam Spectrophotometer and Hall Effect Measurements system were used to analyse structural, surface morphology, optical and electrical properties of the films. XRD analysis revealed that deposited Ga doped CdS thin films had polycrystalline hexagonal phase, with preferred orientation along the (002) planes. An increase in Raman spectral intensity was observed for the doped films as compared to undoped CdS films. AFM and SEM analysis showed that grains were uniformly distributed on the substrate and were spherical in shape. The grain size and roughness increased with an increase in do** concentration as featured in the AFM and SEM images. Ga do** showed a strong effect to increase the transmittance of the films, with a maximum average transmittance of about 76% for film doped with 0.002 M of Ga concentration. Optical band gap for both undoped and doped films was in the range of 2.28 eV–2.44 eV. Electrical resistivity of the films decreased with an increase in dopant concentration, however beyond 0.002 M the resistivity increased.
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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.
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Authors would like to thank the University of Dar es Salaam, The World Academy of Sciences, and International Science Programme for financial support.
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Conceptualization: GS; Methodology: GS; Formal analysis and investigation: GS and ETS; Writing - original draft preparation: GS; Writing - review and editing: GS, MES, NRM and ETS; Funding acquisition: MES and NRM; Resources: GS, MES and NRM; Supervision: MES and NRM.
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Sungi, G., Samiji, M.E., Mlyuka, N.R. et al. Effect of Ga do** on optical transmittance and electrical conductivity of CdS thin films. J Mater Sci: Mater Electron 34, 768 (2023). https://doi.org/10.1007/s10854-023-10185-4
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DOI: https://doi.org/10.1007/s10854-023-10185-4