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Light enhanced direct Cu bonding for advanced electronic assembly

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Abstract

An innovative and efficient surface modification pre-treatment that enhances Cu–Cu direct bonding through electromagnetic irradiation, including pulsed Xenon flash and near infrared rays is proposed. Without vacuum, short but critical electromagnetic radiation exposure on faying faces prior to bonding can significantly improve the joint strength up to 50% or even more. Copper atom diffusion acceleration by increased compressive residual surface stresses resulting from sudden heating/cooling accounts for the joint reinforcement. A close relationship between the increase in joint strength and the change in surface physics properties due to electromagnetic irradiations can be found.

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Acknowledgements

This work was supported by the Ministry of Science and Technology (Taiwan, R.O.C.) under contracts NSC 101-2628-E-005-001-MY2 and MOST 106-2221 -E-005-028-MY3, for which the authors are grateful. This work was also supported by the “Innovation and Development Center of Sustainable Agriculture” from the Featured Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (Taiwan, R.O.C.).

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Chung Hsing University, Taichung, 402, Taiwan

    Sin-Yong Liang & Jenn-Ming Song

  2. Advanced Semiconductor Engineering Group, Kaohsiung, 811, Taiwan

    Shang-Kun Huang, Ying-Ta Chiu, David Tarng & Chih-Pin Hung

  3. Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung, 402, Taiwan

    Jenn-Ming Song

  4. Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung, 402, Taiwan

    Jenn-Ming Song

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  1. Sin-Yong Liang
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  2. Jenn-Ming Song
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  3. Shang-Kun Huang
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  4. Ying-Ta Chiu
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  5. David Tarng
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  6. Chih-Pin Hung
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Correspondence to Jenn-Ming Song.

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Liang, SY., Song, JM., Huang, SK. et al. Light enhanced direct Cu bonding for advanced electronic assembly. J Mater Sci: Mater Electron 29, 14144–14150 (2018). https://doi.org/10.1007/s10854-018-9547-5

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  • DOI: https://doi.org/10.1007/s10854-018-9547-5

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