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Resistance switching behavior and ferroelectric properties of the Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03Zn x O3 thin films

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Abstract

Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03Zn x O3 (BHSFMZn x O) thin films were prepared by a chemical solution deposition method on the fluorine doped tin oxide (FTO) substrates. The effects of Sr, Ho, Mn and Zn co-do** on the crystal structure, defects, leakage current, resistance switching behavior and ferroelectric properties of the BiFeO3 films were investigated. The results show that Zn2+ doped BHSFMO films lead to the transformation of the preferred orientation from (110) to (100). The oxygen vacancies, \({(Zn{\prime _{Fe}} - V_{O}^{{ \cdot \cdot }})^ \cdot },\) leakage current density and the Schottky barrier of BHSFMZn x O films were increased with the increase of Zn2+ do**. The BHSFMZn0.04O film shows the highest resistance switching ratio (18.6) at 200 kV/cm. The BHSFMZn0.01O film have larger remanent polarization and switching current (P r ~ 135 µC/cm2 and I S ~ 1.5 mA), and the relatively low coercive field and the polarization leakage current (E c ~ 350 kV/cm and I L ~ 0.14 mA). Therefore, the resistance switching behavior or ferroelectric properties can be obtained by controlling the do** amount of Zn2+.

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Acknowledgements

This work was supported by the Project of the National Natural Science Foundation of China (Grant No. 51372145), the Shaanxi Province Key Research and Development Plan (S2018-YF-YBGY-0327), the Academic Leaders Funding Scheme of Shaanxi University of Science & Technology (2013XSD06), and the Graduate Innovation Fund of Shaanxi University of Science & Technology (SUST-A04).

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shaanxi University of Science & Technology, **’an, 710021, China

    Meiyou Guo, Guoqiang Tan, Wei Yang & Ao **a

  2. Department of Information Engineering, Engineering University of PAP, **’an, 710086, China

    Long Lv

  3. School of Arts and Sciences, Shaanxi University of Science & Technology, **’an, 710021, China

    Huijun Ren

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Guo, M., Tan, G., Yang, W. et al. Resistance switching behavior and ferroelectric properties of the Bi0.89Ho0.08Sr0.03Fe0.97−xMn0.03Zn x O3 thin films. J Mater Sci: Mater Electron 29, 12399–12407 (2018). https://doi.org/10.1007/s10854-018-9355-y

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