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Point defect chemistry of donor-doped bismuth titanate ceramic

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Abstract

This communication reports on the defect chemistry at room temperature of barium (Ba) doped bismuth titanate (Bi4Ti3O12), emphasizing the influence of the point defects on its electrical properties. Pure and Ba doped Bi4Ti3O12 were prepared by a conventional solid-phase reaction technique. The addition of Ba into the crystal structure of Bi4Ti3O12 was monitored by X-ray diffraction measurements combined with Rietveld refinement studies where it was determined that Ba occupies the bismuth (Bi) lattice sites as well as the presence of oxygen vacancies (\(V_{O}^{{ \bullet \bullet }}\)). The characterization of the point defects was carried out using impedance and electron spin resonance spectroscopies where the results support the models of compensation mechanisms dominated by electrical positive charges \(({h^ \bullet })\) and oxygen vacancies (\(V_{O}^{{ \bullet \bullet }}\)).

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Acknowledgements

The authors gratefully acknowledge the financial support from the Fonds de Recherché du Quebec-Nature et Technologies (FRQNT), the Natural Sciences and Engineering Research Council of Canada (NSERC) and the National Science and Technology Council of Mexico (CONACyT).

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Authors and Affiliations

  1. Centre Énergie, Matériaux et Télécommunications, INRS, 1650 Lionel-boulet, Varennes, QC, J3X1S2, Canada

    Fabian Ambriz-Vargas

  2. Department of Engineering Physics, École Polytechnique de Montréal, Station Centre-ville, Montréal, H3A0C5, Canada

    Josefina Crespo-Villegas

  3. Instituto Politécnico Nacional, UPALM, Zacatenco, 07738, México city, México

    Rafael Zamorano-Ulloa, Roman Cabrera-Sierra & Carlos Gómez-Yáñez

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  1. Fabian Ambriz-Vargas
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  5. Carlos Gómez-Yáñez
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Correspondence to Fabian Ambriz-Vargas.

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Ambriz-Vargas, F., Crespo-Villegas, J., Zamorano-Ulloa, R. et al. Point defect chemistry of donor-doped bismuth titanate ceramic. J Mater Sci: Mater Electron 30, 2763–2771 (2019). https://doi.org/10.1007/s10854-018-0552-5

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  • DOI: https://doi.org/10.1007/s10854-018-0552-5

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