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Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes

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Abstract

Nitride-based light-emitting diodes (LEDs) were fabricated based on initial patterned sapphire substrate by thin film (TF) and flip-chip (FC) techniques. An enhancement of 7.7% in light output power was first obtained by optimizing the p-type contact layer. Then, periodic patterned surface was optimized by wet etching after removal of the sapphire substrate, and the light output power of the TFFC-LEDs was enhanced by 19.8% as compared to that of the TFFC-LEDs with original patterned surface. The device performance characteristic including illuminant pattern, emission wavelength movement and junction temperature variation of the optimized TFFC-LEDs were shown as compared with commercialized LEDs. The results indicate that the TFFC-LEDs possess uniform current distribution and lower junction temperature, thus show promising applications in various areas such as automotive lighting, illegal capture and solid-state lighting.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 61604179), the Department of Science and Technology at Guangdong Province (Grant No. 2016B090903001, 2016B090904001, 2016B090918126) and the Science and the Technology Project of Guangzhou City (Grant No. 201707010067).

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Authors and Affiliations

  1. School of Information Engineering, Guangdong University of Technology, Guangzhou, 510006, China

    Wen-Jie Liu & Yi-Jun Liu

  2. School of Physics and Optoelectronics, South China University of Technology, Guangzhou, 510640, Guangdong, China

    **ao-Long Hu

Authors
  1. Wen-Jie Liu
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  2. **ao-Long Hu
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  3. Yi-Jun Liu
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Correspondence to **ao-Long Hu or Yi-Jun Liu.

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Liu, WJ., Hu, XL. & Liu, YJ. Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes. J Mater Sci: Mater Electron 29, 19825–19829 (2018). https://doi.org/10.1007/s10854-018-0110-1

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  • DOI: https://doi.org/10.1007/s10854-018-0110-1

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