Abstract
The present study reports the temperature dependence of dielectric response of Ni doped MgTiO3 ceramics over a broad frequency range. (Mg1−x Ni x )TiO3 (x = 0.00–0.07) ceramics are prepared by a solid-state reaction process. The processing parameters are optimized to achieve maximum relative density. Among all the samples, (Mg0.95Ni0.05)TiO3 (MNTO) ceramics is exhibited the highest density with the best microstructure at 1300 °C. The optimum microwave dielectric properties (ε r ~ 17.44, Q × f 0 ~ 181 THz) are displayed by the sample doped with x = 0.05 wt%. The detailed dielectric studies are performed on (Mg0.95Ni0.05)TiO3 composition in two different frequency ranges, 100 Hz–100 kHz at 298–358 K and 1–100 MHz at 133–503 K, respectively. A dielectric constant of 18.26 at 100 MHz is observed for (Mg0.95Ni0.05)TiO3 specimen at temperature 503 K. The frequency dependent conductivity is explained based on the basis of Jonscher power law. Further, the DC conductivity results obey the Arrhenius law, and the obtained activation energies are found to be 0.41 and 0.06 eV for (Mg0.95Ni0.05)TiO3 ceramics, measured at 100 MHz for high temperature (293–503 K) and cryogenic temperatures (133–293 K), respectively.
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Acknowledgments
This work has been supported by the Board of Research in Fusion Science & Technology (BRFST, India) of National Fusion Programme under the Project NFP-RF-A12-01. The authors are grateful to BRFST for financial support. D. Pamu thanks Defence Research and Development Organisation (DRDO) [ERIP/ER/0900371/M/01/1264], DAE-BRNS [37(1)/14/33/2015/BRNS], and Department of Science and Technology (DST) [SR/FTP/PS-109/2009] for providing the research facilities. P. Gogoi acknowledges the infrastructure facility of XRD provided by DST, New Delhi, through Fund for Improvement of S & T Infrastructure (FIST) program [SR/FST/PSII-020/2009].
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Gogoi, P., Sharma, P. & Pamu, D. Microwave and broadband dielectric properties of Ni substituted MgTiO3 ceramics. J Mater Sci: Mater Electron 27, 9052–9060 (2016). https://doi.org/10.1007/s10854-016-4938-y
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DOI: https://doi.org/10.1007/s10854-016-4938-y