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A 2.99 dB NF 15.6 dB Gain 3-10GHz Ultra-wideband low-noise amplifier for UWB systems in 65 nm CMOS

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Abstract

A low noise figure (NF) and high power gain (S21) 3–10 GHz ultra-wideband (UWB) low noise amplifier (LNA) in 65 nm CMOS technology is proposed for UWB system which has a high figure of merit. A shunt–shunt resistive feedback technique is used to achieve wideband input impedance matching. A differential current-reused structure is used to achieve high common noise suppression and low power consumption. The implemented LNA achieves a high and flat aS21 of 15.6 ± 1.07 dB with an input return loss (S11) which is better than − 8.7 dB and a low NF of 2.99 ± 0.18 dB at frequencies of 3–10 GHz. The measured input third-order intermodulation point (IIP3) is − 5.7 dBm at 6 GHz.

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Funding

The funding was provided by National Natural Science Foundation of China (Grand No. 61874082).

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Authors and Affiliations

  1. **dian University, **’an, China

    Peng Luo, Maliang Liu, Long Chen, Ji Gao, Zhangming Zhu & Yintang Yang

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  1. Peng Luo
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  2. Maliang Liu
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  3. Long Chen
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  4. Ji Gao
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  5. Zhangming Zhu
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  6. Yintang Yang
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Correspondence to Maliang Liu.

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Luo, P., Liu, M., Chen, L. et al. A 2.99 dB NF 15.6 dB Gain 3-10GHz Ultra-wideband low-noise amplifier for UWB systems in 65 nm CMOS. Analog Integr Circ Sig Process 101, 651–657 (2019). https://doi.org/10.1007/s10470-019-01547-2

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  • DOI: https://doi.org/10.1007/s10470-019-01547-2

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